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LED substrate structure and manufacturing method thereof

A technology of substrate structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light output efficiency of flip-chip LED chips, improve axial luminous brightness, strong operability, and improve light output efficiency Effect

Active Publication Date: 2017-05-24
HANGZHOU SILAN MICROELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide an LED substrate structure and its manufacturing method to solve the problem of low light extraction efficiency of existing flip-chip LED chips

Method used

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  • LED substrate structure and manufacturing method thereof
  • LED substrate structure and manufacturing method thereof
  • LED substrate structure and manufacturing method thereof

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Embodiment 1

[0055] Please refer to Figure 2 to Figure 9 , which is a schematic diagram of a device structure formed in the method for manufacturing an LED substrate structure according to Embodiment 1 of the present invention.

[0056] like figure 2 As shown, a substrate 20 is provided, preferably, the substrate 20 is a sapphire substrate.

[0057] Next, a plurality of grooves are formed in the substrate 20, specifically, please refer to Figure 3 ~ Figure 5 .

[0058] First, if image 3 As shown, a mask layer 21 is formed on the substrate 20 . Preferably, the material of the mask layer 21 is at least one of silicon dioxide, silicon nitride and silicon oxynitride. In the embodiment of the present application, the mask layer 21 may be formed by an evaporation process, a sputtering process, a PECVD process, or an LPCVD process.

[0059] Next, if Figure 4 As shown, a plurality of openings 22 are formed in the mask layer 21 to expose part of the substrate 20 . Here, a part of the m...

Embodiment 2

[0072] The difference between the second embodiment and the first embodiment is that the shape of the groove is an inverted triangle, that is, the shape of the first GaN structure is an inverted triangle. Specifically, please refer to Figure 10 ~ Figure 17 , which is a schematic diagram of the device structure formed in the method for manufacturing the LED substrate structure according to the second embodiment of the present invention.

[0073] like Figure 10 As shown, a substrate 30 is provided, preferably, the substrate 30 is a sapphire substrate.

[0074] Next, a plurality of grooves are formed in the substrate 30, specifically, please refer to Figure 11 ~ Figure 13 .

[0075] First, if Figure 11 As shown, a mask layer 31 is formed on the substrate 30 . Preferably, the material of the mask layer 31 is at least one of silicon dioxide, silicon nitride and silicon oxynitride. In the embodiment of the present application, the mask layer 31 may be formed by an evaporat...

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Abstract

The invention provides an LED substrate structure and a manufacturing method of the LED substrate structure. In the LED substrate structure, a first GaN structure and a second GaN structure can enhance transmission of light, further the luminous efficiency of a flip LED chip is improved, and the luminance of the flip LED chip is improved accordingly; a third GaN structure has a condensation function, and consequently the axial luminance of the flip LED chip is improved; in addition, an AlGaN layer can inhibit defects in the second GaN structure and the third GaN structure from extending outwards, defects in the subsequent structures are reduced, and furthermore, the AlGaN layer can improve the breakdown resisting capacity of the flip LED chip and facilitates the improvement on the performance and reliability of the flip LED chip. The manufacturing method of the LED substrate structure is simple in process, high in operability and suitable for large-scale commercialized production, and accords with the future development road of the flip LED chips.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic chip manufacturing, in particular to an LED substrate structure and a manufacturing method thereof. Background technique [0002] With the improvement of people's living standards and the enhancement of environmental protection awareness, the pursuit of home environment, leisure and comfort continues to improve. Lamps and lighting have gradually shifted from simple lighting functions to coexistence of decoration and lighting. Solid-state cold light source LEDs with dual advantages of lighting and decoration have become an inevitable trend to replace traditional light sources into people's daily life. [0003] Since the commercialization of GaN-based LEDs in the early 1990s, after more than 20 years of development, its structure has become mature and perfect, and it has been able to meet people's needs for lighting decoration at this stage; but it is necessary to completely rep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/22H01L33/00
CPCH01L33/0075H01L33/025H01L33/48H01L33/58H01L2933/0033
Inventor 张昊翔丁海生李东昇江忠永
Owner HANGZHOU SILAN MICROELECTRONICS
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