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Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and preparation method thereof

A multiferroic, thin-film technology, applied in coatings and other directions, can solve the problems of limited BFO application, difficult hysteresis loop measurement, weak BFO magnetic properties, etc., to reduce defects, improve magnetoelectric properties, and reduce content.

Inactive Publication Date: 2015-04-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the preparation of BFO, due to the volatilization of Bi, oxygen vacancies are formed inside the material, and at the same time, due to the valence change of Fe, its leakage conductance is relatively large.
Therefore, the ferroelectric properties of BFO are generally poor, and its hysteresis loop is difficult to measure.
On the other hand, the special antiferromagnetic helical magnetic structure makes the magnetism of BFO very weak, which greatly limits the application of BFO.

Method used

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  • Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and preparation method thereof
  • Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and preparation method thereof
  • Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Step 1. The molar ratio is 0.96:0.08:0.01:0.97:0.03. Dissolve bismuth nitrate, holmium nitrate, calcium nitrate, ferric nitrate, and manganese nitrate in a solvent (AE=Ca, x=0.01, excess 5% bismuth nitrate) , To obtain a stable Bi with a total concentration of metal ions of 0.3 mol / L 0.91 Ho 0.08 Ca 0.01 Fe 0.97 Mn 0.03 O 3 Precursor liquid; the solvent is a mixture of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0030] Step 2. Choose the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean the substrate with ultrasonic for 10 minutes, then clean the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60℃ Medium bake for 5 minutes, then take it out and let it stand to room temperature; finally, place the substrate in an ultraviolet irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin coating Bi on clea...

Embodiment 2

[0039] Step 1. The molar ratio is 0.94:0.08:0.03:0.97:0.03. Dissolve bismuth nitrate, holmium nitrate, calcium nitrate, ferric nitrate, and manganese nitrate in a solvent (AE=Ca, x=0.03, excess 5% bismuth nitrate) , To obtain a stable Bi with a total concentration of metal ions of 0.003mol / L 0.89 Ho 0.08 Ca 0.03 Fe 0.97 Mn 0.03 O 3 Precursor liquid; the solvent is a mixture of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 2.5:1;

[0040] Step 2. Choose the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean the substrate with ultrasonic for 10 minutes, then clean the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60℃ Medium bake for 5 minutes, then take it out and let it stand to room temperature; finally, place the substrate in an ultraviolet irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin coating Bi on c...

Embodiment 3

[0043] Step 1. The molar ratio is 0.92:0.08:0.05:0.97:0.03. Dissolve bismuth nitrate, holmium nitrate, calcium nitrate, iron nitrate, and manganese nitrate in a solvent (AE=Ca, x=0.05, excess 5% bismuth nitrate) , To obtain a stable Bi with a total concentration of metal ions of 0.01 mol / L 0.87 Ho 0.08 Ca 0.05 Fe 0.97 Mn 0.03 O 3 Precursor; the solvent is a mixture of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3.5:1;

[0044] Step 2. Choose the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean the substrate with ultrasonic for 10 minutes, then clean the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60℃ Medium bake for 5 minutes, then take it out and let it stand to room temperature; finally, place the substrate in an ultraviolet irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin coating Bi on clean FTO / ...

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Abstract

The invention provides a Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and a preparation method thereof. The method comprises the following steps: preparing a Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 precursor solution from bismuth nitrate, holmium nitrate, nitric acid AE, ferric nitrate and manganese acetate, wherein AE is Ca, Ba or Sr, and x=0.01-0.08; spinning the precursor solution on a substrate; and then spinning, drying and annealing, so as to obtain the Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film. The Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film is simple in demands on equipment; the experiment condition is easy to achieve; the doping amount is easy to control; the ferroelectric property of the film can be greatly improved; and the prepared Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film is good in uniformity, low in leakage current and low in coercive field, and has relatively high remanent polarization.

Description

Technical field [0001] The invention belongs to the field of functional materials and relates to a multiferroic Bi 0.92-x Ho 0.08 AE x Fe 0.97 Mn 0.03 O 3 Film and its preparation method. Background technique [0002] BiFeO 3 (BFO) has both ferroelectricity and antiferromagnetism at room temperature, and is considered to be one of the multiferroic materials with good application potential. BFO belongs to the R3c point group. It is a distorted tripartite perovskite structure. It is one of the few that can simultaneously exhibit G-type antiferromagnetic order (Neer temperature 380°C) and ferroelectric order (Curie temperature 810°C) at room temperature. One of the multi-iron materials. BFO has magnetoelectric coupling properties at room temperature and has potential application prospects in information storage, spintronic devices and pyroelectric effects. However, during the preparation of BFO, due to the volatilization of Bi, oxygen vacancies are formed inside the material, and ...

Claims

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Application Information

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IPC IPC(8): C03C17/22
CPCC03C17/3417C03C2217/70C03C2217/94C03C2218/113
Inventor 谈国强耶维任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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