Organic electroluminescent device and preparation method thereof
An electroluminescent device and electroluminescent technology, which can be applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as low light-emitting performance
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[0036] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:
[0037] Step S110 , anode 20 on the surface of glass substrate 10 .
[0038] The glass substrate 10 is glass with a refractive index of 1.8-2.2, and the transmittance at 400 nm is higher than 90%. The glass substrate 10 is preferably glass with a grade of N-LAF36, N-LASF31A, N-LASF41A or N-LASF44.
[0039] The anode 20 is formed on one side surface of the glass substrate 10 . The material of the anode 20 is indium tin oxide (ITO), aluminum zinc oxide (AZO) or indium zinc oxide (IZO), preferably ITO. The thickness of the anode 20 is 80nm-300nm, preferably 120nm. The anode 20 is prepared by magnetron sputtering. The acceleration voltage of magnetron sputtering is 300-800V, the magnetic field is 50-200G, and the power density is 1-40W / cm 2 .
[0040] In this embodiment, the glass substrate 10 is rinsed with distilled wate...
Embodiment 1
[0058] The structure prepared in this example is glass / ITO / CsN 3 :MgCO 3 / TiO 2 :Zn / WO 3 / NPB / BCzVBi / TAZ / CsF / Ag organic electroluminescence device.
[0059] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. Magnetron sputtering anode on the glass substrate, the material is ITO, the thickness is 120nm; the scattering layer is prepared on the surface of the anode, the scattering layer includes a cesium salt doped layer and a titanium dioxide doped layer, and the cesium salt doped layer is prepared first, and the material includes CsN 3 and MgCO 3 , CsN 3 and MgCO 3 The mass ratio is 6:1, prepared by electron beam, the thickness is 45nm, and then prepared titanium dioxide doped layer, the material includes titanium dioxide and zinc, using electron beam evaporation, the thickness is 80nm, TiO 2 Particle size is 50nm, TiO 2 The mass ratio to Zn is 40:1; the hole injection layer is prepa...
Embodiment 2
[0064] The structure prepared in this example is glass substrate / IZO / Cs 2 CO 3 :CaCO 3 / TiO 2 :Zn / V 2 o 5 / TAPC / DCJTB / TPBi / Cs 2 CO 3 / Pt organic electroluminescent devices.
[0065] The high refractive index glass is N-LAF36. After the glass is rinsed with distilled water and ethanol, soak it in isopropanol for one night. An anode film was prepared on a high refractive index glass substrate, the material was IZO, and the thickness was 80nm. Then the scattering layer is prepared, which is composed of a cesium salt doped layer and a titanium dioxide layer. The cesium salt doped layer is prepared first, and the material includes Cs 2 CO 3 and CaCO 3 , Cs 2 CO 3 and CaCO 3 The doping mass ratio is 4:1, prepared by electron beam, with a thickness of 30nm, and then a titanium dioxide layer is prepared, and the material includes TiO 2 And Zn, TiO 2 The mass ratio to Zn is 50:1, using electron beam evaporation, the thickness is 100nm, TiO 2 The particle size is 20nm. Ev...
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