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Display base plate and preparation method thereof, and display device

A technology for display substrates and base substrates, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of poor coverage characteristics, wrinkles, and fractures of the gate insulating layer, so as to reduce the deterioration of coverage characteristics and improve the open state. The effect of current

Active Publication Date: 2015-03-04
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the above problems, the present invention provides a display substrate and its preparation method, and a display device, which are used to solve the problem that the increase in the thickness of the gate layer in the prior art leads to poor coverage characteristics of the gate insulating layer at the sidewall or even wrinkles or fractures. The problem

Method used

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  • Display base plate and preparation method thereof, and display device
  • Display base plate and preparation method thereof, and display device
  • Display base plate and preparation method thereof, and display device

Examples

Experimental program
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Embodiment 1

[0022] figure 1 It is a schematic structural diagram of a display substrate provided in Embodiment 1 of the present invention. Such as figure 1 As shown, the display substrate includes a base substrate 101 and gate lines and data lines located on the base substrate 101, the gate lines and the data lines define pixel units, and the pixel units include thin film transistors and pixel electrodes. The thin film transistor includes a gate, an active layer 104 , a source 105 and a drain 106 . An auxiliary layer 102 is further disposed on the base substrate 101, and a first groove is disposed on the auxiliary layer 102, and the gate and the gate line are located in the first groove. In this embodiment, the gate and the gate line are collectively referred to as a gate pattern 103, and the gate pattern 103 is located in the first groove, which can reduce the problem of the gate at the side wall due to the increase in the thickness of the gate layer. The covering properties of the i...

Embodiment 2

[0031] This embodiment provides a display device, including the display substrate provided in Embodiment 1. For details, please refer to the description in Embodiment 1 above, which will not be repeated here.

[0032] In the display device provided in this embodiment, the thin film transistor includes a gate, an active layer, and a source and drain, and an auxiliary layer is further arranged on the base substrate, and a first groove is arranged on the auxiliary layer, so that The gate and the gate line are located in the first groove, which can reduce the risk of poor coverage of the gate insulation layer at the sidewall or even wrinkles or fractures due to the increase in the thickness of the gate layer. In addition, due to the protection of the auxiliary layer, even if a thicker gate layer is used, a thinner gate insulating layer can be used, so that the on-state current of the thin film transistor can be increased.

Embodiment 3

[0034] figure 2 It is a flow chart of a method for manufacturing a display substrate provided by Embodiment 3 of the present invention. Such as figure 2 As shown, the manufacturing method of the display substrate includes:

[0035] Step 2001, forming an auxiliary layer on the base substrate, the auxiliary layer is provided with a first groove.

[0036] image 3 It is a schematic diagram of forming the auxiliary layer in the third embodiment. Such as image 3 As shown, an auxiliary layer 102 is formed on a base substrate 101 , and a first groove 205 is disposed on the auxiliary layer 102 . Optionally, the auxiliary layer 102 is further provided with a second groove 206 .

[0037] Step 2002, forming gates and gate lines in the first groove.

[0038] Figure 4 It is a schematic diagram of forming gates and gate lines in Embodiment 3. Such as Figure 4As shown, gates and gate lines are formed in the first groove 205 . Optionally, a gate metal 107 is formed in the seco...

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Abstract

The invention discloses a display base plate, a preparation method of the display base plate, and a display device. The display base plate comprises a substrate base plate, a grid line and a data wire, wherein the grid line and the data wire are positioned on the substrate base plate and used for limiting a pixel unit, wherein the pixel unit comprises a thin film transistor and a pixel electrode; the thin film transistor comprises a grid electrode, an active layer and a source / drain electrode; an assisting layer is also arranged on the substrate base plate; a first groove is arranged in the assisting layer; the grid electrode and the grid line are both positioned into the first groove. With the adoption of the display base plate, that the coverage characteristic of a grid insulating layer at the sidewall is lowered down as the thickness of the grid electrode layer increases and even the risk of wrinkling or breaking occurs can be reduced; moreover, a thin grid insulating layer can be adopted although a thick grid electrode layer is put into use because of the protection of the assisting layer, and therefore, the ON-state current of the thin film transistor can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display substrate, a preparation method thereof, and a display device. Background technique [0002] For large-size, high-frequency AMOLED displays, in order to reduce the resistance-capacitance delay effect (RC delay), it is necessary to use a thicker gate layer. When the thickness of the gate layer increases, the thickness of the gate insulating layer also needs to be increased. Larger, so as to achieve better coverage on the side wall of the gate line, and at the same time ensure the flatness of the upper surface of the gate insulating layer. However, the increase in the thickness of the gate layer will lead to deterioration of the coverage characteristics of the gate insulating layer at the side walls or even wrinkles or fractures. Contents of the invention [0003] In order to solve the above problems, the present invention provides a display substrate and its preparat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32
Inventor 李旭远
Owner BOE TECH GRP CO LTD
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