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Method for reducing oxygen donor content of Czochralski monocrystal

An oxygen donor and single crystal technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of single generation processing, manufacturing, and less influence on the quality of single crystal production technology, and achieve slowdown reaction, reducing the P-type single crystal oxygen donor effect, and increasing the effect of argon flow

Inactive Publication Date: 2015-02-18
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most domestic single crystal manufacturers still stay at the single processing and manufacturing level, and the influence of single crystal production process on quality is rarely studied

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Example 1: A method for reducing oxygen donors of Czochralski P-type 8-inch single crystals, including seeding steps, shoulder setting steps, shoulder turning steps, equal diameter steps, finishing steps, and oxygen control steps.

[0016] Wherein, in the step of shouldering, the furnace pressure is 10 Torr, the rotational speed of the seed crystal is 10 rpm, the rotational speed of the crucible is 10 rpm, and the flow rate of the inert gas is 80 s lpm;

[0017] In the shoulder turning step, the furnace pressure is 10 Torr, the rotation speed of the seed crystal is 10 rpm, the rotation speed of the crucible is 10 rpm, and the flow rate of the inert gas is 80 slpm;

[0018] In the equal diameter step, the furnace pressure is 10 torr, the rotational speed of the seed crystal is 10 rpm, the rotational speed of the crucible is 8 rpm, and the flow rate of the inert gas is 80 slpm.

[0019] Wherein the inert gas is argon.

[0020] The single crystal produced by the method in...

Embodiment 2

[0022] Embodiment 2: A method for reducing the oxygen donor of Czochralski P-type 8-inch single crystal, including the seeding step, the shoulder step, the shoulder turning step, the equal diameter step, the finishing step and the oxygen control step.

[0023] Wherein, in the shoulder setting step, the furnace pressure is 14 Torr, the rotational speed of the seed crystal is 12 rpm, the rotational speed of the crucible is 12 rpm, and the flow rate of the inert gas is 100 slpm;

[0024] In the shoulder turning step, the furnace pressure is 14 Torr, the rotation speed of the seed crystal is 12 rpm, the rotation speed of the crucible is 12 rpm, and the inert gas flow rate is 100 slpm;

[0025] In the equal diameter step, the furnace pressure is 14 torr, the rotational speed of the seed crystal is 12 rpm, the rotational speed of the crucible is 10 rpm, and the flow rate of the inert gas is 100 slpm.

[0026] Wherein the inert gas is argon.

[0027] The single crystal produced by t...

Embodiment 3

[0029] Embodiment 3: A method for reducing the oxygen donor of Czochralski P-type 8-inch single crystal, including the seeding step, the shoulder setting step, the shoulder turning step, the equal diameter step, the finishing step and the oxygen control step.

[0030] Wherein, in the shoulder setting step, the furnace pressure is 12 Torr, the rotation speed of the seed crystal is 11 rpm, the rotation speed of the crucible is 11 rpm, and the inert gas flow rate is 90 slpm;

[0031] In the shoulder turning step, the furnace pressure is 12Torr, the rotation speed of the seed crystal is 11rpm, the rotation speed of the crucible is 11rpm, and the inert gas flow rate is 90slpm;

[0032] In the equal diameter step, the furnace pressure is 12 torr, the rotation speed of the seed crystal is 11 rpm, the rotation speed of the crucible is 9 rpm, and the flow rate of the inert gas is 90 slpm.

[0033] Wherein the inert gas is argon.

[0034] The single crystal produced by the method in Ex...

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Abstract

The invention discloses a method for reducing an oxygen donor content of a Czochralski monocrystal. The method comprises the steps of seeding, shouldering, rotating, obtaining equal diameter, ending and oxygen controlling. The method disclosed by the invention has the advantages as follows: the furnace pressure is reduced to accelerate the pumping of a main pump, increase argon flow, exhaust the SiO volatile gas more quickly, and reduce the content of oxygen which is fed to the molten silicon; the revolving speed of a crucible where the monocrystal grows is reduced, reaction between the molten silicon and the quartz crucible can be slowed down, and the oxygen content in the molten silicon can be reduced, so that the content of oxygen fed to the monocrystal can be reduced, and further the type P monocrystal donor effect can be fundamentally reduced; the revolving speed of the seed crystal can be increased, the latent heat release of crystallization can be quickened, and the cooling speed can be increased, so that the monocrystal can quickly pass through the oxygen donor forming area to reduce the oxygen donor effect.

Description

Technical field: [0001] The invention relates to a method for producing a single crystal, in particular to a method for reducing the oxygen donor of a Czochralski single crystal. Background technique: [0002] Oxygen is the most important impurity in Czochralski (CZ) silicon single crystals. The oxygen concentration in silicon is generally around 10 17 ~10 18 cm 3 Order of magnitude, exists in the silicon lattice as a gap state. Oxygen is introduced during the crystal growth process. Due to the influence of thermal history, during the cooling process of the crystal, the head of the single crystal is at high temperature for a long time and the cooling is slow. Aggregates to produce electrically active SiO 4 2- , donating electrons to become oxygen donors. [0003] The P-type 8-inch single crystal oxygen donor is affected by the oxygen content. Since the segregation coefficient of oxygen is greater than 1, the oxygen in the crystal decreases linearly (the change curve i...

Claims

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Application Information

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IPC IPC(8): C30B27/02C30B29/06
Inventor 马洋陈康王军磊王建平谷守伟贾海洋王永青梁山王岩徐强郝勇
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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