Spacing layer double-exposure etching method
A double exposure and etching process technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the edge roughness of the etched structure line, affecting the quality of the etched edge, distortion, etc., to avoid etching The effect of uneven etching rate, improved line edge roughness, and improved etching quality
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[0050] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe the implementation of the present invention in detail in conjunction with the accompanying drawings.
[0051] Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0052] Figure 6 It is a flow chart of the steps of the double exposure etching method for the spacer layer provided by the present invention.
[0053] Such as Figure 6 As shown, the spacer layer double-exposure etching method provided in this specific embodiment includes the f...
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