Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of manufacturing method of n-type IBC silicon solar cell based on ion implantation process

A silicon solar cell and ion implantation technology, applied in the field of solar cells, can solve problems such as low boron content, and achieve the effects of high minority carrier lifetime, technical precision, and reduced recombination rate

Inactive Publication Date: 2016-08-24
ALTUSVIA ENERGY TAICANG
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 2. The boron content of the N-type substrate is extremely low, so the light-induced attenuation caused by the boron-oxygen pair is not as obvious as that of the p-type substrate material, and the efficiency improvement of the packaged components is more obvious;

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of manufacturing method of n-type IBC silicon solar cell based on ion implantation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This embodiment includes the following steps:

[0037] 1. Select an n-type silicon substrate with a resistivity of 3-5Ω·cm, and its minority carrier lifetime is greater than 500us, use chemical etching to remove the damaged layer on the surface of the silicon wafer, and make texture on both sides.

[0038] 2. Double-sided phosphorus diffusion: the diffusion resistance is 60Ω / □.

[0039] 3. Print corrosive paste on the p+ defined area on the back to remove the phosphosilicate glass in the p+ defined area.

[0040] 4. Use 20% TMAH solution to carry out selective etching at 60°C, polish the p+ defined area, and etch for 30 minutes.

[0041] 5. Remove the phosphosilicate glass on the front surface of the n-type silicon substrate, and use hydrofluoric acid, nitric acid and water with a volume ratio of 1:30:300 to etch the front surface of the n-type silicon substrate. 140Ω / □.

[0042] 6. Remove the back phosphosilicate glass and perform RCA cleaning.

[0043] 7. Using th...

Embodiment 2

[0050] This embodiment includes the following steps:

[0051] 1. Select an N-type silicon substrate with a resistivity of 5-12Ω·cm, whose minority carrier lifetime is greater than 500us, remove the damaged layer on the surface of the silicon wafer by chemical etching, and make texture on both sides.

[0052] 2. Double-sided phosphorus diffusion: the diffusion resistance is 80Ω / □.

[0053] 3. Use laser to remove the phosphosilicate glass in the p+ defined area.

[0054]4. Use 25% TMAH solution to carry out selective etching at 70°C, and polish the p+ defined area, and the etching time is 20 minutes.

[0055] 5. Remove the phosphosilicate glass on the front surface of the n-type silicon substrate, use 1:30:300 hydrofluoric acid, nitric acid and water to etch the front surface of the n-type silicon substrate at 25°C, and the etching time is 20min. The square resistance of the front surface after etching was 130Ω / □.

[0056] 6. Remove the back phosphosilicate glass and perform ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an n-type IBC silicon solar cell manufacturing method based on the ion implantation technology. Doping between n+ areas and p+ areas is achieved through combination between a boron diffusion mode and a boron ion implantation mode, and through the technology, current leakage of tunnel junctions of cells can be effectively avoided without performing isolation on the n+ / p+ interface of the back side.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a manufacturing method of an n-type IBC silicon solar cell based on an ion implantation process. Background technique [0002] Solar cells can directly convert solar energy into electrical energy, which is an effective way to utilize solar energy resources. Since no harmful substances are produced during use, solar cells are favored in solving energy and environmental problems and have a good market prospect. Solar energy is also Known as the most ideal energy source, it is an important resource for the survival and development of human society. [0003] At present, the mainstream solar cell material uses p-type silicon as the substrate, and forms a pn junction through high-temperature phosphorus diffusion. For p-type silicon materials, because it is insensitive to metal impurities and many non-metal defects, and has fewer boron-oxygen pairs in the body, its perf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/265
CPCH01L21/26506H01L31/1804Y02E10/547Y02P70/50
Inventor 董经兵朱彦斌张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com