Manufacturing method of low-temperature polysilicon thin film, low-temperature polysilicon thin film and related devices

Abstract

The invention provides a method for manufacturing a low-temperature polysilicon film, a low-temperature polysilicon film and related devices, belonging to the field of display panel manufacturing. Wherein, the manufacturing method of the low-temperature polysilicon thin film includes: forming an amorphous silicon layer on a substrate; forming an alkali metal ion adsorption layer on the amorphous silicon layer; Laser annealing to convert the amorphous silicon layer into a polysilicon layer; removing the alkali metal ion adsorption layer to form a polysilicon film on the substrate. The technical scheme of the invention can reduce the alkali metal ions in the low-temperature polysilicon thin film, thereby effectively preventing the threshold voltage drift of the low-temperature polysilicon thin film transistor.

Description

technical field [0001] The invention relates to the field of display panel manufacturing, in particular to a low-temperature polysilicon thin film and a manufacturing method thereof, a low-temperature polysilicon thin film transistor, an array substrate and a display device. Background technique [0002] Organic light-emitting display (OLED) has attracted much attention due to its many advantages such as self-illumination, fast response, thinness, low power consumption and flexible display, and is considered to be the next generation of flat panel display technology. At present, OLED technology has been gradually applied to various electronic products, among which the active matrix organic light-emitting display (AMOLED) is famous for its advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle and ultra-light and ultra-thin. Become the main trend of OLED development. [0003] At present, polysilicon thin film transis...

AI Technical Summary

Problems solved by technology

The threshold voltage of a thin film transistor is related to many factors, including the doping of the crystalline silicon layer of the base layer, the thickness of the dielectric, the gate material and the dielectric or the charge condition at the interface between the dielectric and the semiconductor, etc., wherein the movable alkali metal ions ( Na + etc.), is one of the main reasons for the threshold voltage drift of thin film transistors. The polysilicon thin film prepared by the prior art often contains more mobile alkali metal ions, which makes the threshold voltage drift of the thin film transistor made of the polysilicon thin film, and then Affects the performance of thin film transistors

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