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Nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material and preparation method thereof

A hollow sphere and nanosphere technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of harsh reaction conditions, high production cost, and unsuitable for large-scale industrial production. The method is simple, the cost is low, and the effect of reducing the requirements of the equipment

Inactive Publication Date: 2014-12-10
EAST CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the current preparation methods have harsh reaction conditions and high production costs, which are not suitable for large-scale industrial production.

Method used

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  • Nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material and preparation method thereof
  • Nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material and preparation method thereof
  • Nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material and preparation method thereof

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Embodiment Construction

[0033] The present invention will be described in further detail in conjunction with the following specific examples and accompanying drawings, and the protection content of the present invention is not limited to the following examples. Without departing from the spirit and scope of the inventive concept, changes and advantages conceivable by those skilled in the art are all included in the present invention, and the appended claims are the protection scope. The process, conditions, reagents, experimental methods, etc. for implementing the present invention are general knowledge and common knowledge in the art except for the content specifically mentioned below, and the present invention has no special limitation content.

[0034] Example Preparation of MoS surrounded by nanospheres 2 Semiconductor materials with micron hollow sphere structure

[0035] The specific steps of preparation are as follows:

[0036] (1) Dissolve 0.2 g of sodium molybdate, 0.4 g of thioacetamide, ...

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Abstract

The invention discloses a nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material. The nanospher encapsulated MoS2 micron hollow sphere structure semiconductor material comprises MoS2 micron-scale spheres and MoS2 nano scale spheres, wherein the nano scale spheres are uniformly dispersed and grown on the surface of the micron scale spheres; the MoS2 micron scale spheres are hollow and have thin spherical shells, the nano scale spheres are of an onion-like structure and are formed by nesting the spherical shells layer by layer, and the small part at the center of structure is hollow. The invention also discloses a preparation method of the nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material. A MoS2 spherical structure with two diameters can be prepared by only adopting a one-step hydro-thermal method. The preparation method of the nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material has the advantages of less product impurities and low preparation cost, and is simple to prepare. The nanosphere encapsulated MoS2 micron hollow sphere structure semiconductor material has great development potential in the fields of photocatalysis on industrial waste water and field emission.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, in particular to a MoS 2 MoS composed of micron-scale large spheres and nano-scale small spheres 2 Micro-nano-structure semiconductor materials and their preparation methods. Background technique [0002] MoS 2 It is a transition metal sulfide with a narrow band gap, and it is also a typical two-dimensional layered semiconductor material. Each layer is composed of a sandwich structure formed by a molybdenum atomic layer and two sulfur atomic layers. are held together by weak van der Waals forces. Due to this layered structure, MoS 2 The nanomaterials have unique electrical, optical, catalytic, lubricating and other properties, and are used in solid lubricants, lithium-ion battery electrodes, supercapacitors, gas sensors, photocatalysis and other fields. So, MoS 2 Nanomaterials have attracted the attention of many researchers. [0003] R...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06B82Y30/00B82Y40/00
Inventor 谭英华郁可朱自强
Owner EAST CHINA NORMAL UNIV
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