Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of silver phosphate film

A silver phosphate film, silver phosphate technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc. Hydrogen and other problems, to achieve the effect of low cost, easy operation, and easy control of thickness

Inactive Publication Date: 2014-12-10
CHINA UNIV OF MINING & TECH
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of silver phosphate Ag 3 PO 4 Thin film preparation methods to address current silver phosphate Ag 3 PO 4 Based photocatalysts are not easy to recycle, and it is not easy to realize photoelectric energy conversion and hydrogen production by photolysis of water

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of silver phosphate film
  • Preparation method of silver phosphate film
  • Preparation method of silver phosphate film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A silver film was deposited as a seed layer by magnetron sputtering on a glass substrate, and silver nitrate AgNO with a mass percentage concentration of 0.17% was dropped on the silver film. 3 Aqueous solution, spin-coat, dry. Then drip full mass percentage concentration is 0.14% disodium hydrogen phosphate Na 2 HPO 4 aqueous solution, and then spin-coated and dried in the same manner. Repeat the above steps 5 times to obtain silver phosphate Ag 3 PO 4 Prefabricated film. Finally, it was sintered at 400°C for 1.5h to obtain silver phosphate Ag with good binding force. 3 PO 4 film.

Embodiment 2

[0022] in TiO 2 On the glass substrate, a 100nm thick silver film is formed as a seed layer by thermal evaporation, and silver nitrate AgNO with a mass percentage concentration of 0.34% is dripped on the silver film. 3 Aqueous solution, spin-coat, dry. It is 0.28% disodium hydrogen phosphate Na to drip full mass percent concentration on it again 2 HPO 4 aqueous solution, dried at 60°C for 10 minutes, and repeated the above steps 3 times to obtain silver phosphate Ag 3 PO 4 Prefabricated film. Finally, sinter at 300°C for 1 hour to obtain silver phosphate Ag with good binding force 3 PO 4 film.

Embodiment 3

[0024] On a transparent conductive glass substrate, a 50nm silver film is formed as a seed layer by electrodeposition, and the silver film is dripped with a mass percentage concentration of 0.017% silver nitrate AgNO 3 Aqueous solution, directly dried in an oven at 60°C. It is 0.014% disodium hydrogen phosphate Na on it dripping full mass percent concentration again 2 HPO 4 The aqueous solution is directly placed in an oven at 60°C to dry to obtain a silver phosphate film. Finally, sinter at 550°C for 2 hours to obtain silver phosphate Ag with good binding force. 3 PO 4 film.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a silver phosphate film, belonging to a preparation method of a photo-catalytic and photo-electrochemical material of a semiconductor. The preparation method of the silver phosphate film comprises the following steps: (1) ultrasonically washing a glass or silicon wafer substrate by using ethyl alcohol and an acetone reagent sequentially; (2) depositing an Ag film on the substrate by using sputtering and thermal evaporation methods; (3) dropwise adding silver nitrate AgNO3 to the Ag film until the Ag film is fully filled with silver nitrate AgNO3, carrying out spin-coating and drying; and then dropwise adding a disodium hydrogen dodecahydrate Na2HPO4 aqueous solution, carrying out spin-coating and drying; and (4) putting the Ag film in a muffle furnace, heating to 300-550 DEG C, and sintering for 0.5-3h under the condition of preserved temperature to obtain the silver phosphate Ag3PO4 film, wherein the mass percent concentration of a silver nitrate AgNO3 aqueous solution is 0.017%-0.34%; the mass percent concentration of the disodium hydrogen dodecahydrate Na2HPO4 aqueous solution is 0.014%-0.28%; the silver phosphate Ag3PO4 film with the structure has a thickness of 0.3-10 microns. The preparation method of the silver phosphate film has the advantages that the method is simple, non-toxic and easy to operate; the inert atmosphere protection is not needed in the method, so that the method is low in cost and suitable for industrial production; the film prepared by the method is relatively good in adhesive force; and the thickness of the film is easy to control.

Description

technical field [0001] The invention relates to a method for preparing semiconductor photocatalysis and photoelectrochemical materials, in particular to a method for preparing a silver phosphate thin film. Background technique [0002] Solar energy is a clean, abundant and inexhaustible resource with broad application prospects. One of the important uses is solar photocatalysis. It includes two types of photolysis of water and photodegradation, that is, using semiconductors to capture sunlight to decompose water or degrade pollutants. The most common photocatalyst is TiO 2 , it has the advantages of stable chemical properties, low cost, large surface area, etc., but the wide band gap makes it only able to use a very small part of ultraviolet light in sunlight. [0003] Silver phosphate Ag 3 PO 4 As a new type of visible light-responsive photocatalyst, it has excellent photocatalytic performance under the irradiation of visible light and can degrade organic pollutants. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/18
Inventor 顾修全强颖怀赵宇龙
Owner CHINA UNIV OF MINING & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com