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Method for preparing transparent conductive film

A transparent conductive film and substrate technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of complex production process and increased production cost, reduce power consumption and production cost, increase oxygen Effects of Vacancy Concentration and Sheet Resistivity Reduction

Inactive Publication Date: 2014-11-26
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the annealing process in the prior art needs to use a high temperature (>500°C) environment, and needs to be equipped with special equipment, such as a tubular annealing furnace or a rapid annealing furnace (Rapid Hermal Annealing, referred to as "RTA"), which increases the production cost and reduces the production cost. The process is also more complex

Method used

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  • Method for preparing transparent conductive film
  • Method for preparing transparent conductive film
  • Method for preparing transparent conductive film

Examples

Experimental program
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Effect test

Embodiment 1

[0045] The specific preparation process of a transparent conductive film provided in this embodiment is as follows:

[0046] Ultra-clear glass was ultrasonically cleaned with alcohol for 5 minutes, then rinsed with deionized water for 2 minutes, then dried and dried;

[0047] Put the dried ultra-clear glass into the magnetron sputtering transition chamber, then evacuate the magnetron sputtering transition chamber to below 10Pa, and transfer the ultra-clear glass to the sputtering deposition chamber;

[0048] Wait until the background vacuum is evacuated to 1×10 -3 Pa, into high-purity Ar, O 2 and H 2 , the flow rates are 380sccm, 20sccm, 100sccm respectively;

[0049] Adjust the flexible guide valve so that the pressure in the sputtering deposition chamber is 0.45Pa, turn on the DC power supply, increase the power supply to 3000W, control the transmission rate to 11.67mm / s, and the sputtering target is an indium tin oxide rotating target;

[0050] After the sputtering is c...

Embodiment 2

[0053] The specific preparation process of a transparent conductive film provided in this embodiment is as follows:

[0054] Ultra-clear glass was ultrasonically cleaned with alcohol for 5 minutes, then rinsed with deionized water for 2 minutes, then dried and dried;

[0055] Put the dried ultra-clear glass into the magnetron sputtering transition chamber, then evacuate the magnetron sputtering transition chamber to below 10Pa, and transfer the ultra-clear glass to the sputtering deposition chamber;

[0056] Wait until the background vacuum is evacuated to 1×10 -3 Pa, into high-purity Ar, O 2 and H 2 , the flow rates are 380sccm, 20sccm, 100sccm respectively;

[0057] Adjust the flexible pilot valve so that the pressure in the sputtering deposition chamber is 0.45Pa, turn on the DC power supply, increase the power supply to 4000W, control the transmission rate to 15.56mm / s, and the sputtering target is an indium tin oxide rotating target;

[0058] After the sputtering is c...

Embodiment 3

[0061] The specific preparation process of a transparent conductive film provided in this embodiment is as follows:

[0062] Ultra-clear glass was ultrasonically cleaned with alcohol for 5 minutes, then rinsed with deionized water for 2 minutes, then dried and dried;

[0063] Put the dried ultra-clear glass into the magnetron sputtering transition chamber, then evacuate the magnetron sputtering transition chamber to below 10Pa, and transfer the ultra-clear glass to the sputtering deposition chamber;

[0064] Wait until the background vacuum is evacuated to 1×10 -3 Pa, into high-purity Ar, O 2 and H 2 , the flow rates are 380sccm, 20sccm, 100sccm respectively;

[0065] Adjust the flexible guide valve so that the pressure in the sputtering deposition chamber is 0.45Pa, turn on the DC power supply, increase the power supply to 5000W, control the transmission rate to 19.45mm / s, and the sputtering target is an indium tin oxide rotating target;

[0066] After the sputtering is c...

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Abstract

The invention discloses a method for preparing a transparent conductive film and belongs to the technical field of photoelectric materials. The method comprises the following steps of providing a base, carrying out thorough ultrasonic cleaning on the base, spin-drying the cleaned base, drying the base by an oven, putting the dried base into a magnetron sputtering chamber, carrying out vacuum-pumping on the magnetron sputtering chamber, feeding high-purity Ar, O2 and assistant reaction gas which is one of H2 and a H-rich compound into the magnetron sputtering chamber, keeping the pressure intensity in the magnetron sputtering chamber in a range of 0.3-1Pa, carrying out sputtering on the target material so that a transparent conductive film is formed on the base, and carrying out annealing treatment on the transparent conductive film at an annealing temperature of 150-200 DEG C. Through use of H-rich gas such as H2 in the sputtering deposition, the transparent conductive film having low resistivity and high transmittance can be obtained under low-temperature annealing conditions in short time so that an annealing temperature and a production cost are greatly reduced.

Description

technical field [0001] The invention relates to the technical field of photoelectric material preparation, in particular to a method for preparing a transparent conductive film. Background technique [0002] With the development of society and science, the demand for functional materials is becoming increasingly urgent. With the development of industries such as displays, touch screens, light emitting diodes (Light Emitting Diode, referred to as "LED"), and solar energy, transparent conductive oxide films, new functional materials, have developed rapidly. The transparent conductive oxide film (Transparent Conductive Oxide, referred to as "TCO") has excellent photoelectric properties, not only high transmittance in the visible light range, but also good conductivity. The most representative of TCO is Indium Tin Oxide (Indium Tin Oxide, referred to as "ITO") film, the most common component of ITO is In with a mass ratio of 9:1. 2 o 3 and SnO 2 , where Sn atoms replace In ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/58C23C14/08
Inventor 谢鹏王江波林凡谭劲松
Owner HC SEMITEK CORP
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