A light-emitting diode epitaxial wafer and its manufacturing method

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacture method thereof, and belongs to the field of a light emitting diode. The epitaxial wafer comprises a buffer layer, a 3D growth layer, a 2D filling layer, an N-type layer, a multi-quantum well and a P-type layer. The 2D filling layer comprises a plurality of first sub-layers and second sub-layers which alternatively grow, one of the first sub-layers is directly contacted with the 3D growth layer, the quantity of the first sub-layers is not smaller than two and is equal to the quantity of the second sub-layers, the first sub-layers are prepared by use of undoped Al(x)Ga(1-x)N, the second sub-layers are prepared by use of undoped GaN, and 0.5<=x<1. The method comprises the following steps: providing a substrate, successively growing the buffer layer, the 3D growth layer, the 2D filling layer, the N-type layer, the multi-quantum well and the P-type layer on the substrate, wherein the growing of the 2D filling layer comprises alternatively growing the plurality of first sub-layers and second sub-layers. According to the invention, the dislocation density caused by a mismatch of the substrate and a GaN crystal lattice can be effectively reduced, and the internal quantum efficiency and the antistatic capability of an LED are improved accordingly.

Description

technical field [0001] The invention relates to the field of light emitting diodes (Light Emitting Diode, referred to as LED), in particular to a light emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] In the development of the LED industry, GaN materials are typical representatives of the third-generation semiconductor materials. Because GaN materials lack homogeneous substrates, currently GaN-based epitaxial wafers are mostly grown in a heterogeneous epitaxial way, such as using sapphire substrates. [0003] The traditional GaN-based epitaxial wafer growth method is to grow an epitaxial layer on a sapphire substrate. The epitaxial layer includes a sequentially grown buffer layer, 3D growth layer, 2D leveling layer, N-type layer, multiple quantum well layer and P-type layer. Among them, the 3D growth layer is also called the roughening layer, which grows crystal islands based on the buffer layer. The 2D leveling layer, also k...

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Problems solved by technology

These defects will extend to the multi-quantum well layer and the P-type layer with the growth of the epitaxial layer, which not only increases the possibility of non-radiative recombination of carriers, but also introduces energy levels in the forbidden band, reducing the minority carrier lifetime, thereby reducing The internal quantum efficiency of the LED, and also affects the antistatic ability of the LED

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