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Preparation method of bismuth-based thin film with high tunability

A bismuth-based, high-profile technology, applied in ion implantation plating, metal material coating process, coating, etc., to achieve good crystallinity, improved orientation and tuning performance

Inactive Publication Date: 2014-10-08
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a bismuth-based thin film with a high tuning rate, so as to solve the transition layer problem existing in the preparation process of the bismuth-based thin film

Method used

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  • Preparation method of bismuth-based thin film with high tunability
  • Preparation method of bismuth-based thin film with high tunability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Clean the substrate substrate

[0028] Select a silicon substrate with a platinum electrode on the surface, place it in an alcoholic organic solvent for ultrasonic cleaning, rinse it with deionized water, and dry it in a nitrogen stream.

[0029] The substrate of the present invention may be a silicon substrate, an alumina substrate or a conductive glass substrate; the electrodes may be gold electrodes or platinum electrodes.

[0030] (2) Deposition induction layer

[0031] (a) Put the cleaned silicon substrate into the magnetron sputtering vacuum chamber, install the zinc bismuth niobate target on the corresponding radio frequency sputtering target, and start the vacuuming procedure.

[0032] (b) Wait until the vacuum degree reaches 9×10 -5 Torr, turn on the radio-frequency current source corresponding to the zinc-bismuth niobate target, pass in the working gas argon, complete radio-frequency magnetron sputtering, and prepare the zinc-bismuth niobate induction la...

Embodiment 2

[0041] The preparation process of Example 2 is the same as that of Example 1, except that the annealing temperature of the zinc-bismuth niobate induction layer is 650° C., and the tuning rate measured in Example 2 under the same conditions is 33%.

Embodiment 3

[0043] The preparation process of Example 3 is the same as that of Example 1, except that the annealing temperature of the zinc-bismuth niobate induction layer is 700° C., and the tuning rate measured in Example 2 under the same conditions is 31%.

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Abstract

The invention discloses a preparation method of a bismuth-based thin film with high tunability. The preparation method comprises the following steps: first, cleaning a substrate chip; then, preparing a zinc bismuth niobate inductive layer on the substrate chip; then, annealing at 650-750 DEG C; then, depositing to prepare a magnesium bismuth niobate thin film layer on the substrate chip with the zinc bismuth niobate inductive layer; and finally annealing at 750 DEG C to prepare the zinc bismuth niobate thin film in a bismuth-based structure with high tenability. Compared with the prior art, the preparation method disclosed by the invention is better in crystallinity, both the orientation and tuning performance are remarkably improved, and the tunability is increased from 30% to 35%.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, in particular to a method for preparing a high-performance bismuth-based thin film used for tuning Background technique [0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices, especially microwave tuning devices. Microwave tuning devices with fast response speed, small size, wide frequency band, high sensitivity and low operating voltage are indispensable components of current and next-generation communication systems. These requirements have brought great challenges to current electronic materials and components. [0003] Microwave dielectric tunable materials are widely used in microwave tunable components, such as phase shifters, resonators and filters on phased array antennas. In recent years, bismuth-based structural materials have attracted extensive attention due to their excellent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 李玲霞许丹于士辉董和磊金雨馨
Owner TIANJIN UNIV
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