Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sandwich tandem pin structure α-irradiated battery and preparation method thereof

A tandem battery technology, applied in the field of microelectronics, can solve the problems of easy introduction of surface defects, low energy conversion rate, large device leakage current, etc., to achieve improved energy utilization rate, improved energy conversion rate, and large band gap Effect

Active Publication Date: 2017-02-15
XIDIAN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate used in this structure is a P-type highly doped substrate, and the existing process of growing an epitaxial layer on the substrate is immature, so it is easy to introduce surface defects, the leakage current of the device is large, and the energy conversion rate is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sandwich tandem pin structure α-irradiated battery and preparation method thereof
  • Sandwich tandem pin structure α-irradiated battery and preparation method thereof
  • Sandwich tandem pin structure α-irradiated battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1, the preparation sandwich radioactive source is Am 241 , a sandwich tandem PIN structure α-irradiated cell with an α-radiation source layer thickness of 4 μm.

[0049] Step 1: Make the upper PIN knot.

[0050] refer to Figure 4 , the implementation of this step is as follows:

[0051] (1a) Clean the p-type SiC substrate to remove surface contaminants such as Figure 4 As shown in (a):

[0052] (1a.1) Set the doping concentration to 8x 10 17 cm -3 The highly doped p-type 4H-SiC substrate in NH 4 OH+H 2 o 2 Soak in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0053] (1a.2) Use HCl+H on the p-type SiC substrate after removing the surface organic residues 2 o 2 Soak the reagents for 10 minutes, take them out and dry them to remove ionic pollutants.

[0054] (1b) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) as shown:

[0055] An aluminum-doped P-type...

Embodiment 2

[0078] Embodiment 2, the preparation sandwich radioactive source is Am 241 , a sandwich tandem PIN structure α-irradiated cell with an α-radiation source layer thickness of 6 μm.

[0079] Step 1: Make the upper PIN knot.

[0080] refer to Figure 4 , the implementation of this step is as follows:

[0081] 1a) cleaning the p-type SiC substrate to remove surface contaminants, the doping concentration of the p-type SiC substrate is 8x10 17 cm -3 ,Such as Figure 4 As shown in (a):

[0082] This step is the same as step (1a) of Embodiment 1.

[0083] 1b) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) as shown:

[0084] An aluminum-doped P-type doped epitaxial layer is epitaxially grown on the cleaned p-type SiC substrate by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity source i...

Embodiment 3

[0102] Embodiment 3, preparation of sandwich radioactive source α is Pu 238 , a sandwich tandem PIN structure α-irradiated battery with a radioactive source layer thickness of 8 μm.

[0103] Step A: Make the upper PIN knot.

[0104] refer to Figure 4 , the implementation of this step is as follows:

[0105] A1) Clean the p-type SiC substrate to remove surface pollutants, the doping concentration of the p-type SiC substrate is 8×10 17 cm -3 ,Such as Figure 4 (a).

[0106] This step is the same as step (1a) of Embodiment 1.

[0107] A2) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b).

[0108] An aluminum-doped P-type doped epitaxial layer is epitaxially grown on the cleaned p-type SiC substrate by chemical vapor deposition CVD. The process conditions are: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity source is trimethylaluminum, and the alu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a sandwich serial-type PIN-structure alpha irradiation battery and a manufacturing method thereof. The sandwich serial-type PIN-structure alpha irradiation battery and the manufacturing method thereof mainly solve the problems that an existing nuclear battery is low in energy transformation ratio and output power. The sandwich serial-type PIN-structure alpha irradiation battery comprises an upper PIN junction, a lower PIN junction and an alpha radioactive source layer, wherein the upper PIN junction and the lower PIN junction are connected in series. The upper PIN junction sequentially comprises an N-type epitaxial layer ohmic contact electrode, an N-type highly-doped epitaxial layer, a P-type low-doped epitaxial layer, a P-type SiC substrate and a P-type ohmic contact electrode from bottom to top. The lower PIN junction sequentially comprises an N-type ohmic contact electrode, an N-type SiC substrate, an N-type low-doped epitaxial layer, a P-type highly-doped epitaxial layer and a P-type epitaxial layer ohmic contact electrode from bottom to top. The alpha radioactive source layer is clamped between the epitaxial layer ohmic contact electrode of the upper PIN junction and the epitaxial layer ohmic contact electrode of the lower PIN junction, so that high-energy alpha particles are fully utilized. The sandwich serial-type PIN-structure alpha irradiation battery and the manufacturing method thereof have the advantages that the contact area of a radioactive source and a semiconductor is large, the nuclear raw material utilization rate and the energy harvesting rate are high, and the output voltage of the battery is large; the battery can supply electricity to a small circuit enduringly.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to the structure and preparation method of a semiconductor device, specifically a silicon carbide-based sandwich series PIN structure α irradiation battery and a preparation method thereof, which can be used in micro-circuits such as micro-nano electromechanical systems and aviation Aerospace, deep sea, polar regions and other occasions that require long-term power supply and are unattended. [0002] technical background [0003] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more concerned. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G21H1/06
Inventor 郭辉黄海栗张艺蒙宋庆文张玉明
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com