CoCrPt series alloy sputtering target and film and preparation method thereof

Abstract

The invention discloses a CoCrPt series alloy sputtering target and film and a preparation method thereof. The CoCrPt series alloy sputtering target comprises an element B, wherein the content of the element B is 0-20 atomic percent; the alloy target comprises a Co-enriched phase and a B-enriched phase; the B-enriched phase is uniformly distributed in the Co-enriched phase; the average grain size of the Co-enriched phase is 20-50mu m; and the average grain size of the B-enriched phase is 0-20mu m. The method for preparing the CoCrPt series alloy sputtering target comprises the following steps: (1) performing vacuum melting; (2) performing hot isostatic pressure; (3) performing thermal machining; and (4) performing cold machining. The invention also discloses a magnetic recording medium prepared by using the CoCrPt series alloy sputtering target. The magnetic recording medium comprises a substrate layer, an adhesive layer, a soft magnetic layer, an intermediate layer and a magnetic recording layer, wherein the coercive force of the magnetic recording medium is 3000-5000Oe; and the squareness is 0.80-0.95. The CoCrPt series alloy sputtering target is uniform in chemical components and small in deviated nominal composition, and the technical problems in a conventional preparation process that rolling cracking is caused, the yield is low, the mount of deviated nominal composition of the chemical components of the alloy target is large, the content of harmful impurities is extremely high are solved.

Description

technical field [0001] The invention belongs to the field of Pt-containing magnetic recording sputtering targets and magnetic recording media, and in particular relates to a CoCrPt alloy sputtering target, a thin film and a preparation method thereof. Background technique [0002] In 1970, Japanese professor Shunichi Iwasaki proposed that the material used in the perpendicular magnetic recording medium was CoCr alloy. At first, people's research focused on CoCrX alloy, and the X material was generally selected as Ta, Pt, Nb, B, etc. Pt can enhance the magnetocrystalline anisotropy of CoCr materials; Cr is easier to precipitate from the grains to form Cr-rich grain boundaries, thereby reducing the exchange and interaction between grains; adding Ta is beneficial to the precipitation of Cr; B ratio Cr is more likely to precipitate from the grains, thus effectively reducing the coupling effect between grains. Therefore, CoCrPtB alloy sputtering targets are widely used as magnet...

AI Technical Summary

Problems solved by technology

Therefore, compared with the smelting method, there are the following defects: (1) the uniformity of the chemical composition is poor; (2) the gas content of the target material is high, and the density is lower than that of the smelting method; (3) it takes a long time for the composition to be uniform. Ball mill mixing treatment, easy to introduce impurities

The above shortcomings eventually lead to poor film composition uniformity, poor film thickness uniformity, and film defects and other adverse effects, which ultimately affect the magnetic properties of the film.

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