Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of cocrpt series alloy sputtering target material and thin film and preparation method thereof

A sputtering target and alloy target technology, which is applied in sputtering coating, sputtering, metal material coating, etc., can solve the problem of low density, poor film composition uniformity, and poor chemical composition uniformity. and other problems, to achieve the effect of low content of harmful impurity elements, small and uniform grain size, and obvious non-magnetic grain boundaries

Active Publication Date: 2016-07-20
YUNNAN PRECIOUS METALS LAB CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, compared with the smelting method, there are the following defects: (1) the uniformity of the chemical composition is poor; (2) the gas content of the target material is high, and the density is lower than that of the smelting method; (3) it takes a long time for the composition to be uniform. Ball mill mixing treatment, easy to introduce impurities
The above shortcomings eventually lead to poor film composition uniformity, poor film thickness uniformity, and film defects and other adverse effects, which ultimately affect the magnetic properties of the film.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of cocrpt series alloy sputtering target material and thin film and preparation method thereof
  • A kind of cocrpt series alloy sputtering target material and thin film and preparation method thereof
  • A kind of cocrpt series alloy sputtering target material and thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The Co11.5Cr22Pt10B sputtering target material of the present invention is prepared through the following steps:

[0045] (1) Raw material preparation: select Co, Cr, Pt above 3N5 and B with C content <100ppm as raw materials;

[0046] (2) Preparation of master alloy: Co prepared by vacuum induction melting method according to the nominal content of the alloy 80 B 20 (atomic percent) master alloy;

[0047] (3) Preparation of alloy ingots: use the above-mentioned master alloy, carry out batching according to the nominal composition Co11.5Cr22Pt10B, adopt vacuum induction melting method to prepare alloy ingots, first vacuumize to 1×10 -1 Below Pa, then gradually increase the temperature and start to melt the material. When the material is completely melted, pass argon gas, stop heating, and start to solidify the material. After solidifying for about 5-20 minutes, continue to heat up. When the material is completely melted, pour the ingot into the mold ;

[0048] (4) H...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a CoCrPt-based alloy sputtering target material and film and a preparation method thereof. The CoCrPt-based alloy sputtering target material includes B element, and the content of B element is 0-20 atomic percent. The alloy target material It includes two phases of Co-rich phase and B-rich phase, wherein the B-rich phase is uniformly distributed in the Co-rich phase, the average grain size of the Co-rich phase is 20-50 μm, and the average grain size of the B-rich phase is 0-20 μm; the preparation method of the CoCrPt alloy sputtering target includes: (1) vacuum melting; (2) hot isostatic pressing; (3) thermomechanical processing; (4) cold mechanical processing. The magnetic recording medium prepared by using the CoCrPt alloy sputtering target according to the present invention, the magnetic recording medium includes a base layer, an adhesive layer, a soft magnetic layer, an intermediate layer and a magnetic recording layer, and the correction of the magnetic recording medium The coercive force is 3000-5000Oe, and the squareness is 0.80-095. The chemical composition of the invention is uniform and deviates less from the nominal composition, and solves the technical problems of rolling cracks, low yield, large chemical composition deviation from the nominal composition of the alloy target, and high content of harmful impurities in the conventional preparation process.

Description

technical field [0001] The invention belongs to the field of Pt-containing magnetic recording sputtering targets and magnetic recording media, and in particular relates to a CoCrPt alloy sputtering target, a thin film and a preparation method thereof. Background technique [0002] In 1970, Japanese professor Shunichi Iwasaki proposed that the material used in the perpendicular magnetic recording medium was CoCr alloy. At first, people's research focused on CoCrX alloy, and the X material was generally selected as Ta, Pt, Nb, B, etc. Pt can enhance the magnetocrystalline anisotropy of CoCr materials; Cr is easier to precipitate from the grains to form Cr-rich grain boundaries, thereby reducing the exchange and interaction between grains; adding Ta is beneficial to the precipitation of Cr; B ratio Cr is more likely to precipitate from the grains, thus effectively reducing the coupling effect between grains. Therefore, CoCrPtB alloy sputtering targets are widely used as magnet...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C22C19/07C22C1/10C22C1/02G11B5/851G11B5/852
Inventor 谭志龙张俊敏王传军闻明毕珺沈月宋修庆管伟明郭俊梅
Owner YUNNAN PRECIOUS METALS LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products