Auxiliary for polycrystalline silicon wafer texturing and its application
A technology of polycrystalline silicon wafers and auxiliary agents, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of poor texture stability, poor uniformity, and large texture size, and achieve improved silicon The appearance of flakes, the solution to the difficulty of drying, and the effect of strong hydrophobicity
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Embodiment 1
[0023] Apply the texturing process of the polycrystalline silicon sheet texturing auxiliary agent of the present invention, take following process step:
[0024] 1) Preparation of textile auxiliary agent: using deionized water as a solvent, dissolve 0.5g of polyaspartic acid, 0.1g of sodium dodecylbenzenesulfonate, and 1g of triethanolamine in deionized water to obtain 100g of textile additive;
[0025] 2) Preparation of velvet solution: mix 5kg of HF aqueous solution (the mass percentage of HF in HF aqueous solution is 49%) and 20kg of HNO 3 Aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 49%) dissolved in deionized water to obtain 100kg of acid solution; then add 100g of the texturing additive made in step 1) to the acid solution to obtain the texturing liquid;
[0026] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 5°C, and the texturing time is 200s.
Embodiment 2
[0028] Apply the texturing process of polycrystalline silicon sheet texturing additive of the present invention, take following process step:
[0029] 1) Preparation of textile additives: using deionized water as a solvent, dissolve 12g of polyaspartic acid, 6g of sodium dodecylbenzenesulfonate, and 60g of triethanolamine in deionized water to obtain 1.2kg of textile additives;
[0030] 2) Preparation of cashmere liquid: 18kg of HF aqueous solution (the mass percentage of HF in HF aqueous solution is 49%) and 45kg of HNO 3 Aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 49%) was dissolved in deionized water to obtain 100kg of acid solution; then 1.2kg of texturizing additive made in step 1) was added to the acid solution to obtain texturing liquid;
[0031] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 30°C, and the texturing time is 40s.
Embodiment 3
[0033] Apply the texturing process of polycrystalline silicon sheet texturing additive of the present invention, take following process step:
[0034] 1) Preparation of textile additives: using deionized water as a solvent, dissolve 8 g of polyaspartic acid, 3 g of sodium dodecylbenzenesulfonate, and 30 g of triethanolamine in deionized water to obtain 1 kg of textile additives;
[0035] 2) Preparation of cashmere liquid: 10kg of HF aqueous solution (the mass percentage of HF in HF aqueous solution is 49%) and 32kg of HNO 3 Aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 49%) was dissolved in deionized water to obtain 100kg of acid solution; then 1kg of texturing additive made in step 1) was added to the acid solution to obtain texturing liquid;
[0036] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 20°C, and the texturing time is 80s.
[0037] figure 1 It is the scanning...
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