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Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition

一种硬掩模、组合物的技术，应用在用于光机械设备的光敏材料、对表面涂布液体的装置、图纹面的照相制版工艺等方向，能够解决难以提供具有优异轮廓精细图案等问题

Active Publication Date: 2014-07-30
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Today, in order to miniaturize the pattern to be formed, it is difficult to provide a fine pattern with excellent profile only by the above-mentioned conventional photolithography technology

Method used

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  • Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition
  • Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition
  • Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0107] Introduce 27.6g (0.1mol) of benzoperylene and 22.1g (0.1mol) of methoxynaphthoyl chloride together with 500g of chloroform / dichloromethane mixed solution into a 2L three-necked flask, and stir with a stir bar. Then, the reaction was carried out while gradually adding 24.5 g (0.1 mol) of aluminum trichloride. The reaction was stirred at room temperature for 2 hours. After the completion of the reaction, 52.88 g (0.31 mol) of methoxybenzoyl chloride was added to the reactant and stirred, and the reaction was carried out while gradually adding 85.7 g (0.35 mol) of aluminum trichloride.

[0108] After reacting for 5 hours, aluminum trichloride was removed using water to provide reactant powder. The reactant powder, 60 g (1 mol) of acetic acid and 48.5 g (0.6 mol) of hydrogen bromide were introduced into a 500 mL three-necked flask and reacted at 130°C. After 6 hours, it settled in water to provide powder. The powder was washed several times and dissolved in tetrahydrofuran ...

Synthetic example 2

[0112] The monomer represented by the following chemical formula 1bb was obtained according to the same procedure as in Example 1, except that 91.14 g of 0.1 mol of methoxy pyrenyl chloride was used instead of 0.1 mol of methoxy naphthalene Formyl chloride.

[0113] [Chemical formula 1bb]

[0114]

Synthetic example 3

[0116] Introduce 27.6g (0.1mol) of benzoperylene and 68.4g (0.32mol) of methoxynaphthoyl chloride together with 500g of chloroform / dichloromethane mixed solution into a 2L three-necked flask, and stir with a stir bar. And the reaction was performed while gradually adding 85.7 g (0.35 mol) of aluminum trichloride. After the reaction is completed, the aluminum trichloride is removed using water to provide reactant powder. The reactant powder, 60 g (1 mol) of acetic acid and 48.5 g (0.6 mol) of hydrogen bromide were introduced into a 500 mL three-necked flask and reacted at 130° C. for 6 hours. It precipitates in water to provide powder. The powder was washed several times and dissolved in tetrahydrofuran (THF), and the reaction was carried out with gradually adding 18.98 g (0.5 mol) of lithium aluminum hydride. After the reaction is completed, side reactants are removed using a water / methanol mixture to provide a monomer represented by the following chemical formula 1cc.

[0117...

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Abstract

The present invention relates to a monomer for a hardmask composition expressed by chemical formula 1, a hardmask composition including the monomer, and a pattern forming method using the same.

Description

Technical field [0001] Disclosed are a monomer for a hard mask composition, a hard mask composition including the monomer, and a method of forming a pattern using the hard mask composition. Background technique [0002] Recently, the semiconductor industry has advanced to ultra-fine technology with patterns in the size of several nanometers to several tens of nanometers. This ultra-fine technology basically requires effective photolithography. [0003] A typical photolithography technique includes: providing a material layer on a semiconductor substrate; coating a photoresist layer thereon; exposing and developing the photoresist layer to provide a photoresist pattern; and using photoresist The resist pattern serves as a mask to etch the material layer. [0004] Nowadays, in order to miniaturize the pattern to be formed, it is difficult to provide a fine pattern with an excellent profile only by the above-mentioned conventional photolithography technology. Therefore, a layer calle...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11G03F7/004G03F7/26C07C35/44
CPCC07C39/12C07C39/14C07C2603/50C07C2603/54G03F7/094C07C35/44G03F7/004G03F7/0045G03F7/11G03F7/26B05D1/005B05D3/007B05D3/0254B05D3/06C09D173/00G03F7/0752G03F7/30G03F7/36
Inventor 崔有廷权孝英赵娟振金润俊金永珉尹龙云李忠宪
Owner CHEIL IND INC
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