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Negative Photosensitive Silicone Composition

A silane compound and photosensitivity technology, which is applied in optics, optomechanical equipment, instruments, etc., can solve the problem of transmittance decrease, and achieve the effect of excellent electrical insulation properties, high resolution, and high sensitivity

Active Publication Date: 2017-07-04
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in order to maintain the pattern shape after firing, more acid generators are required, so there is a tendency for the transmittance to decrease significantly (see Patent Document 4).

Method used

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  • Negative Photosensitive Silicone Composition
  • Negative Photosensitive Silicone Composition
  • Negative Photosensitive Silicone Composition

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0172]

[0173] In a 2L flask equipped with a stirrer, a thermometer, and a condenser, 36.5 g of a 25% by weight tetramethylammonium hydroxide aqueous solution, 300 ml of isopropanol (hereinafter referred to as IPA), and 1.5 g of water were mixed to prepare a reaction solvent. , and maintained at 10°C. Separately, a mixed solution of 44.6 g of phenyltrimethoxysilane, 34.1 g of methyltrimethoxysilane, and 3.8 g of tetramethoxysilane was prepared. This mixed solution was dripped at 10 degreeC using the dropping funnel in the reaction solvent, and after stirring for 2 hours maintaining at 10 degreeC, 10% HCl aqueous solution was added and neutralized. After adding and shaking 200 ml of toluene and 300 ml of water to the reaction liquid, it separated into two layers. The obtained organic layer was concentrated under reduced pressure to remove the solvent, and PGMEA was added to the concentrate to adjust the solid content to 40% by weight to prepare a solution containing polysil...

Embodiment 1

[0177]

[0178] Stirring was performed at the ratio of polysiloxane (Ia-1):(Ib-7)=(10% by weight): (90% by weight), and then the polysiloxane mixture was adjusted to a 35% by weight PGMEA solution. Measure the dissolution rate of this polysiloxane mixture to 2.38% TMAH aqueous solution after prebaking, the result is 105 / Second. To this siloxane mixture, 1.5% by weight of photoacid generator A1 (acid-releasing type) was added relative to the polysiloxane, and this photoacid generator A1 contained triphenylsulfonium cation and sulfonate anion, It can function by irradiating g-line or i-line. Moreover, 0.3 weight% of KF-53 (trade name, Shin-Etsu Chemical Co., Ltd. make) was added as surfactant with respect to polysiloxane, and the negative photosensitive silicone composition was obtained.

[0179] This photosensitive siloxane composition was applied to a silicon wafer by spin coating, and after application, it was prebaked on a hot plate at 100° C. for 90 seconds, and adjus...

Embodiment 2

[0180]

[0181] With respect to the polysiloxane mixture used in Example 1, the compounding ratio of the polysiloxane mixture was changed to polysiloxane (Ia-1): (Ib-8) = (10% by weight): (90 % by weight) to evaluate the dissolution rate of the polysiloxane mixture.

[0182] A negative photosensitive silicone composition was prepared in the same manner as in Example 1. This composition is coated on the substrate in the same manner as in Example 1, with 220mJ / cm 2 Exposure was performed to form a pattern, and as a result, it was confirmed that a line width / space pattern and a contact hole pattern of 8 μm were engraved in a state where no residue or the like was present. After forming the pattern, it was baked and solidified at 250° C., and it was confirmed by an optical microscope that a cylindrical 8 μm pattern was maintained.

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Abstract

[Problem] To provide a photosensitive siloxane composition which has high resolution, high heat resistance and high transparency, does not undergo thermal sagging, which may occur during thermal curing, without the need of increasing the molecular weight of a cross linking agent or a siloxane compound, and has properties including high sensitivity and a high film-remaining rate. [Solution] A negative-type photosensitive polysiloxane composition characterized by comprising: (I) (Ia) a polysiloxane having such a property that a prebaked film thereof is soluble in an aqueous 5-wt% tetramethylammonium hydroxide solution at a dissolution rate of 3,000 Å / sec. or less and (Ib) a polysiloxane mixture containing a polysiloxane and having such a property that the dissolution rate of a prebaked film thereof in an aqueous 2.38-wt% tetramethylammonium hydroxide solution is 150 Å / sec. or more; (II) a curing aid; and (III) a solvent.

Description

technical field [0001] The present invention relates to a negative photosensitive silicone composition. Moreover, this invention relates to the manufacturing method of the cured film which used this negative photosensitive siloxane composition, the cured film formed from this negative photosensitive siloxane composition, and the element which has this cured film. Background technique [0002] In recent years, in terms of optical elements such as displays, light-emitting diodes, and solar cells, various proposals have been made for the purpose of improving light utilization efficiency and / or saving energy. For example, in liquid crystal displays, a method is known in which a thin film transistor (hereinafter sometimes referred to as TFT) element is covered with a transparent planarization film, and a pixel electrode is formed on the planarization film to increase the aperture of the display device. rate (see Patent Document 1). In terms of the composition of organic electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/075
CPCG03F7/0757
Inventor 横山大志高桥惠福家崇司田代裕治田中泰明吉田尚史野中敏章
Owner MERCK PATENT GMBH
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