Method for producing transparent conducting film glass

Abstract

The invention discloses a method for producing transparent conducting film glass. The method comprises the following steps: (1) introducing a gaseous-state shielding layer precursor containing silane and an oxygen source to the glass surface at a temperature ranging from 460 to 480 DEG C by taking an inert gas as a carrier in an annealing kiln, carrying out photodissociation of the gaseous-state shielding layer precursor by use of a parallel incident laser beam and thus carrying out a chemical vapor reaction to form a shielding layer which is 50-90nm thick on the glass surface; (2) in the annealing kiln and in the glass temperature range of 435-455 DEG C, introducing a gaseous-state conducting layer precursor containing pre-gasified zinc and aluminum sources and the oxygen source to the glass surface on which the shielding layer is already deposited by taking the inert gas as the carrier, and causing the photodissociation of the gaseous-state conducting layer by use of the parallel incident laser beam and thus carrying out the chemical vapor reaction to form a conducting layer which is 250-400nm thick on the glass surface. The method has the advantages that the temperatures of the coating reactions are effectively reduced so that the quality of the film can be improved, and the utilization rate of the precursor gases is increased so that the working conditions of a float line can be kept stable.

Description

technical field [0001] The invention belongs to the field of glass production and manufacturing, in particular to a method for producing transparent conductive film glass on a float line. Background technique [0002] The existing method of producing transparent conductive film glass on the float line is to pass the precursor gas containing the elements constituting the thin film to the hot glass surface. A composite film layer comprising a silicon oxide shielding layer and an oxide conductive layer is deposited in one step. This method must rely on the high temperature of the glass ribbon to drive the chemical reaction. It belongs to the chemical vapor phase reaction of the thermal decomposition mechanism. The coating area must be selected in the high temperature area of ​​the float line. Usually, the shielding layer is plated in the tin bath, and the conductive layer is plated in the tin bath. In the tin bath or at the front end of the annealing kiln. [0003] The existi...

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Problems solved by technology

[0003] The existing method has the following problems: the disturbance to the tin bath is large, resulting in unstable working conditions of the tin bath, increased energy consumption, and serious loss of tin liquid; high temperature in the coating area will cause the precursor gas in a large volume to be heated and reacted, which not only consumes energy It is very large, and the waste of precursor gas is serious, and the utilization rate is generally lower than 15%. The temperature of the coating area is higher than the softening point of the glass, and the film is prone to defects; the temperature of the coating area is too high, which will affect the material, deformation, cooling, and corrosion of the coating equipment. etc. have extremely high requirements, which makes the manufacturing of coating equipment difficult, high in cost and complicated in operation