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Production process of 6-inch lithium niobate or lithium tantalite chips

A production process, lithium niobate technology, applied in the direction of manufacturing tools, metal processing equipment, surface polishing machine tools, etc., can solve the problems of easy cracking and increased difficulty of wafer processing, so as to improve utilization rate, increase production efficiency, The effect of reducing static charge discharge

Inactive Publication Date: 2014-07-16
DEQING JINGHUI OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For large-diameter lithium niobate and lithium tantalate wafers, the increase in diameter makes wafer processing more difficult and easier to crack, and the wafer TTV, WARP, BOW, PLTV and other indicators will also change during processing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A kind of production technology of 6 inches lithium niobate wafer or lithium tantalate wafer, its step is as follows:

[0021] A: The 6-inch lithium niobate and lithium tantalate crystals are cut into wafers with a thickness of 0.8mm by wire, and then poured into a C-shaped edge with an automatic chamfering machine, and put into the corrosion solution for 10 hours to reduce the internal stress;

[0022] B: Put the wafer into the reduction furnace. The wafer and the wafer are heated to 500--600° with nitrogen gas through the company's special reduction paper, and then cooled to room temperature to take out the reduced black or brown lithium niobate lithium tantalate wafer;

[0023] C: Grind with 16B double-sided grinder and No. 1000 green carbon silica sand, the equipment speed is 15 rpm, the reverse pressure is 100MPa, grind to a thickness of 0.53mm according to the reading of the grating ruler, take out the wafer, and clean it with ultrasonic waves. Then put it into th...

Embodiment 2

[0030] A kind of production technology of 6 inches lithium niobate wafer or lithium tantalate wafer, its step is as follows:

[0031] A: The 6-inch lithium niobate and lithium tantalate crystals are cut into wafers with a thickness of 0.6mm by wire, and then poured into a C-shaped edge with an automatic chamfering machine, and put into the corrosion solution for 8 hours to reduce internal stress;

[0032] B: Put the wafer into the reduction furnace. The wafer and the wafer are heated to 500--600° with nitrogen gas through the company's special reduction paper, and then cooled to room temperature to take out the reduced black or brown lithium niobate lithium tantalate wafer;

[0033] C: Grind with 16B double-sided grinder and No. 1000 green carbon silica sand, the equipment speed is 15 rpm, the reverse pressure is 100MPa, grind to a thickness of 0.55mm according to the reading of the grating ruler, take out the wafer, and clean it with ultrasonic waves. Then put it into the cor...

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PUM

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Abstract

The invention belongs to the technical field of tools for lithium chips and particularly relates to a production process of 6-inch lithium niobate or lithium tantalite chips. The production process includes the steps of A, cutting to obtain chips 0.6-1mm in thickness; B, charging the chips into a reduction furnace for reduction; C, after grinding, cleaning by ultrasonic; D, pasting the chips; E, grinding; F, polishing; G, cleaning, and boxing. Internal stress of the chips is removed by double corroding, electrostatic charge is removed from the chips by blackening, ultra-smooth planes are obtained by mechanical chemical polishing, TTV is smaller than 5 um, BOW is smaller than 40 um, warp is smaller than 40 um, PLTV is larger than 95%, and the production process is suitable for mass production.

Description

technical field [0001] The invention belongs to the technical field of lithium oxide wafer tools, in particular to a production process of a 6-inch lithium niobate wafer or lithium tantalate wafer. Background technique [0002] With the further integration of the semiconductor planar process of IT devices and the further increase of the device frequency, not only is it required that the chip be taped on a large-scale and high-precision planar process equipment, but also that the chip can adapt to the thinning of the fingers due to the increase in frequency, and then The chip is required to have low pyroelectricity. In order to meet the low-cost and high-efficiency production requirements of the device, the chip is actively developing in the direction of large size and blackening. The six-inch surface acoustic wave level blackened lithium niobate single wafer is larger in size than ordinary conventional wafers, and the reduction process is used to blacken the wafer to solve t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/08B24B37/10B24B29/02H01L21/304
CPCB24B29/02B24B37/08B24B37/10H01L21/02013
Inventor 李春忠
Owner DEQING JINGHUI OPTOELECTRONICS TECH
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