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Method and system for measuring frequency dispersion characteristic of transistor output resistance

A technology of output resistance and measurement method, which is applied in the field of integrated circuits, can solve the problems that the output resistance dispersion characteristics of transistors are not given, and achieve the effects of accurate establishment, simple measurement and high accuracy

Inactive Publication Date: 2014-07-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to solve the problem that the actual measurement of the output resistance dispersion characteristics of transistors is not provided in the prior art, and to provide a measurement method and system that can measure the output resistance dispersion characteristics of transistor devices

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  • Method and system for measuring frequency dispersion characteristic of transistor output resistance
  • Method and system for measuring frequency dispersion characteristic of transistor output resistance
  • Method and system for measuring frequency dispersion characteristic of transistor output resistance

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Embodiment Construction

[0036] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and cannot be construed as limiting the present invention.

[0037] Such as figure 1 As shown, the measuring method of the transistor output resistance frequency dispersion characteristic of the present invention includes the following steps:

[0038] Step S1: Provide a negative bias voltage to the gate of the transistor.

[0039] Step S2: Provide a forward bias voltage to the drain of the transistor.

[0040] Step S3: Provide an AC signal to the drain of the transistor.

[0041] Step S4: Obtain the output resistance of the transistor when the AC signal is the selected ...

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Abstract

The invention discloses a method and system for measuring the frequency dispersion characteristic of transistor output resistance. The method includes the steps that a negative bias voltage is provided for the grid electrode of a transistor; a forward bias voltage and an AC signal are provided for the drain electrode of the transistor; the output resistance of the transistor is acquired when the AC signal is under a selected frequency; the corresponding relation between the output resistance and the selected frequency of the AC signal is acquired so as to obtain the frequency dispersion characteristic of the output resistance. By means of the method and system, the frequency dispersion characteristic of the transistor output resistance can be measured, the advantages of being simple to measure and high in accuracy are achieved, and the output resistance frequency dispersion characteristic obtained through the method and system can be used for evaluating material growth quality, monitoring technological processes, and analyzing device physical characteristics; in addition, technicians in the field can further use the frequency dispersion characteristic to correct the correlation of the output resistance of a frequency dispersion sub circuit in a large-signal model so as to accurately establish the large-signal model.

Description

Technical field [0001] The invention relates to the technical field of integrated circuits, and in particular to a method and system for measuring the frequency dispersion characteristics of transistor output resistance. Background technique [0002] At present, the world's research on high electron mobility transistor materials such as gallium nitride (GaN) is still facing many bottlenecks, which severely restrict the development of transistor devices and integrated circuits, and its epitaxial growth is also in an immature stage. A large number of dislocations or defects are often introduced in the device, and interface states are introduced at the interface of different materials of the device, and defects such as traps are introduced into the material, resulting in a deep trap level, which seriously changes the capture and release of carriers in the device channel. The process greatly affects the changes in source and drain current, the power characteristics of the device, and...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 庞磊陈晓娟罗卫军袁婷婷
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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