An off-line monitoring method for nitrogen-doped silicon carbide thin films
A silicon carbide and nitrogen doping technology, used in electrical components, circuits, semiconductor/solid-state device testing/measurement, etc., can solve the problems such as the inability to solve the monitoring wafer recycling cost and the inability to reduce the reserve of spare bare wafers, etc. To achieve the effect of saving recovery costs
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[0029] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described examples are only some examples of the present invention, not all examples. Based on the examples summarized in the present invention, all examples obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0030] It should be noted that, in the case of no conflict, the examples in the present invention and the features in the examples can be freely combined with each other.
[0031] An example of the invention is an off-line monitoring method for nitrogen-doped silicon carbide films, such as figure 2 shown, including the following steps:
[0032] Step S1, providing a bare wafer;
[0033] Step S2, growing a silicon dioxide film on the bare wafer;
[0034] Step S3, growing a metal layer on the silicon dioxide film;
[0035] Step S4, remov...
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