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Thermoelectric thin film structure

A thermoelectric thin film and thermoelectric technology, which is applied in the direction of thermoelectric device node lead wire materials, thermoelectric device components, etc., can solve the problems of low electrical conductivity and thermal conductivity, ZT value can not be effectively improved, and achieve the effect of simplifying the structure and composition

Active Publication Date: 2016-08-24
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Since the physical properties of materials in nature are usually dependent on electrical conductivity and thermal conductivity, it is difficult for general materials to have good electrical conductivity and low thermal conductivity at the same time, so that the ZT value after the final sum cannot be effectively improved. Therefore, the electrical conductivity and thermal conductivity of materials The control of the coefficient becomes the key point to improve the thermoelectric performance, but it is also the bottleneck of the material development in terms of the current technology

Method used

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Embodiment Construction

[0026] figure 1 is a schematic diagram of a thermoelectric thin film structure according to an embodiment of the present invention. Please refer to figure 1 , in this embodiment, the thermoelectric thin film structure 100 includes a thermoelectric substrate 110 and a pair of first diamond-like carbon layers 120, 130, wherein the first diamond-like carbon layers 120, 130 are disposed on opposite surfaces of the thermoelectric substrate 110 .

[0027] Here, the thermoelectric substrate 110 includes a material capable of converting heat into electricity, which can be a P-type thermoelectric material or an N-type thermoelectric material. For example, BiSbTe, BiSeTe, CsBi4Te6, Bi 2 Te 3 、 Bi 2 Te 3 / Se 2 Te 3 Superlattice, PbTeSeTe / PbTe quantum dots or superlattice, Zn 4 Sb 3 Alloy, Ce(Fe,Co) 4 Sb 12 , PbTe alloy, CoSb 3 , SiGe alloy, AgSbTe 2 / GeTe, Bi 2 Sr 2 co 2 o y , Ca 3 co 4 o 9 , Mg 2 Si, Na x CoO 2 , La 2 Te 3 , MnSi1.75, SnTe, TAGS (tellurium, ant...

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Abstract

The invention discloses a thermoelectric film structure, which includes a thermoelectric substrate and a pair of first diamond-like carbon layers. The first diamond-like carbon layer is arranged on two opposite surfaces of the thermoelectric substrate and has conductivity.

Description

technical field [0001] The present invention relates to a thin film structure, and in particular to a thermoelectric thin film structure. Background technique [0002] In the traditional thermoelectric application field, to judge whether a substance is a good thermoelectric material, it is mainly to observe its thermoelectric figure of merit (Figure of Merit, ZT value), and the ZT value is mainly related to the Seebeck coefficient (Seebeck coefficient), electrical conductivity and thermal conductivity coefficient Relatedly, the above three parameters also directly affect whether a material has good thermoelectric properties and whether it can be applied to the thermoelectric effect. The higher the ZT value, the more significant the thermoelectric effect, and its relationship is: [0003] ZT = α 2 σ k T [0004] In the above formula, α ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/12
CPCH10N10/82H10N10/851H10N10/853H10N10/855H10N10/852
Inventor 吕明生陈泰盛施智超
Owner IND TECH RES INST
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