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Preparation method for co-doped zinc oxide film through atomic layer deposition

A zinc oxide thin film, atomic layer deposition technology, applied in coating, gaseous chemical plating, metal material coating process and other directions, can solve the problems of affecting film thickness and uniformity, difficult to achieve precise doping, thin film doping and so on , to achieve the effect of improving stability, promoting formation and simple preparation process

Active Publication Date: 2014-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

However, MOCVD cannot do in situ doping of thin films and the turbulence and gas flow distribution in the reaction will affect the thickness and uniformity of the film
It is also difficult to achieve accurate doping of specific atomic layer positions by MBE technology

Method used

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  • Preparation method for co-doped zinc oxide film through atomic layer deposition

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Embodiment Construction

[0008] see figure 1 As shown, the method for preparing a co-doped zinc oxide film provided by atomic layer deposition in the embodiment of the present invention includes: treating a silicon substrate or a glass substrate with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaning it with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid:hydrogen peroxide=4:1. Put the substrate into the atomic layer deposition chamber, turn on the atomic layer deposition equipment, adjust the working parameters, vacuumize and heat the bottom to achieve various working environments required for the experiment; conduct multiple groups of N-Zr co-doped zinc oxide thin films Composite deposition, namely Zn(C 2 h 5 ) 2 / N 2 / H 2 O / N 2 / plasma N 2 / N 2 / Zn(C 2 h 5 ) 2 / N 2 / (CH 3 CH 2 O) 4 Zr / N 2 / H 2 O / N 2 / plasma N 2 / N 2 =0.15s / 50s / 0.07s / 50s / 10s / 50s / 0.08s / 50s / 0.08s / 50s / 0.07s / 50s / 10s / 50s. Wherein the flow rate of nitrogen is 1sccm-1000scc...

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Abstract

The present invention discloses a preparation method for a co-doped zinc oxide film through atomic layer deposition. The preparation method comprises: placing a substrate in an ALD reaction chamber, heating the substrate and the chamber pipeline, and sequentially carrying out multi-component composite deposition, wherein the composite deposition comprises respectively introducing one doped deposition of a doped element Zr-containing doped source, second zinc source deposition, two nitrogen doped source depositions and two oxygen source depositions after first zinc source deposition to form N-Zr-N co-doping, wherein the deposition sequence of the nitrogen doped source deposition and the oxygen source deposition is that the oxygen source deposition and the nitrogen doped source deposition are sequentially performed, and the deposition sequence of the doped element Zr-containing doped source deposition and the second zinc source deposition is that the second zinc source deposition and the doped element Zr-containing doped source deposition are sequentially performed. With the method, the in situ donor-acceptor co-doping can be performed on the zinc oxide film so as to increase the doping amount of the acceptor element and promote the p type conversion of the zinc oxide film.

Description

technical field [0001] The invention relates to the technical field of preparation of zinc oxide thin films, in particular to a preparation method of atomic layer deposition co-doped zinc oxide thin films. Background technique [0002] Semiconductor thin films play a very important role in high-tech industries such as microelectronics, optics, and informatics. Develop high-quality semiconductor thin film preparation and doping technologies, especially for the preparation, characterization, and The study of doping and its characteristics is of great significance to important application fields for new energy, including ultraviolet-band luminescent materials, ultraviolet detectors, highly integrated photonics and electronic devices, and solar cells. Zinc oxide, as a new type II-VI compound with direct bandgap and wide bandgap, has a large room temperature bandgap of 3.37eV, and the binding energy of free excitons is as high as 60meV, and it has attracted more and more attentio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/40
Inventor 卢维尔夏洋李超波解婧
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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