Graphite bearing disc for LED epitaxial process, and matching substrate thereof

Abstract

The invention provides a graphite bearing disc for an LED epitaxial wafer process, and a matching substrate thereof. The bearing disc comprises a bearing disc body. The body is uniformly provided with wafer grooves; the center of the body is provided with a shaft hole; the edge inner sides of the wafer grooves are provided with erection bench surfaces; there are distances between the erection bench surfaces and the edge top portions of the wafer grooves; and the erection bench surfaces are uniformly distributed at the edges of the wafer grooves. The substrate comprises a substrate body and wings erected on the erection bench surfaces. The advantages are mainly reflected as follows: the bearing disc provided by the invention overcomes the disadvantages of not high overall epitaxial wafer yield rate and unstable uniform distribution of epitaxial wafer wavelengths due to uneven heating by use of a conventional graphite bearing disc, the overall yield rate of grown LED epitaxial wafers is high, the wavelength uniformity is good, and the problems of the epitaxial wavelengths and standard deviation yield rate of the LED epitaxial wafers are well solved.

Description

technical field [0001] The invention relates to a graphite carrying plate and a supporting substrate thereof for LED epitaxy process. Background technique [0002] LED is a solid-state semiconductor diode light-emitting device, which is widely used in lighting fields such as indicator lights and display screens. At present, many LED epitaxial wafers are obtained by metal-organic chemical vapor deposition (MOCVD for short). The carrier plate is introduced into the MOCVD reaction chamber together, and the substrate and the graphite carrier plate are heated together to a high temperature of about 1000°C. In the reaction chamber, organometallic compounds and group V gases are introduced, and after high temperature cracking, they are repolymerized on the wafer substrate to form LED epitaxial layer. [0003] Generally, in the LED light-emitting diode epitaxial wafer manufacturing process, the substrate is in direct contact with the bottom of the wafer groove of the graphite carr...

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Problems solved by technology

[0003] Generally, in the LED light-emitting diode epitaxial wafer manufacturing process, the substrate and the bottom of the wafer groove of the graphite carrier plate are in direct contact, and the substrate is heated by contact heat transfer, resulting in uneven heating of the substrate.

like figure 1 As shown, the application number 201210506371 proposes a graphite carrier plate 1 for LED epitaxial wafer manufacturing process, which changes the contact heat transfer to thermal radiation heating, and solves the scrapping of the bottom of the substrate 3 due to direct contact heating, but Due to the influence of step 2 in the stepped edge pan, combined with figure 2 As shown, the graphite carrier plate and general-purpose sapphire substrate will have large warpage during epitaxial growth, especially at high temperature (1000°C)

Taking the high temperature of 1050°C as an example, the warpage of the sapphire substrate can reach The radius of the current 2-inch sapphire substrate is 46.8mm. It can be calculated that the curvature of the current sapphire substrate is about 0.54°, that is, the deformation of the sapphire substrate is about 11.96mm; the sapphire substrate has obvious warping deformation after being heated. This deformation occurs uniformly over the entire area of ​​the substrate; affects die yield

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