Physical vapor deposition device

Abstract

The invention discloses a physical vapor deposition device, which comprises a chamber body, a radio frequency coil, a faraday shielding element, a plurality of unsymmetrical pressure regulation units and a base, wherein a dielectric cylinder and a target arranged at the top of the dielectric cylinder are arranged in the chamber body; the target is connected with a direct current power supply; the radio frequency coil is arranged in the chamber body, and is arranged on the outer side of the dielectric cylinder in a sleeving manner to excite process gas introduced into the chamber body into plasmas; the faraday shielding element is arranged on the inner wall of the dielectric cylinder, and comprises a plurality of shielding fragments which are distributed along the circumferential direction of the dielectric cylinder at intervals; the shielding fragments are connected to the unsymmetrical pressure regulation units in a one-to-one correspondence way, so that unsymmetrical pressure values of the shielding fragments are regulated respectively; the base is arranged in the chamber body, and is used for placing a chip to be processed. According to the physical vapor deposition device, the etching rate and deposition rate of the faraday shielding element are substantially equal, so that the probability of pollution to a chamber can be reduced, and the service life of the faraday shielding element can also be prolonged.

Description

technical field [0001] The invention relates to the field of physical vapor deposition, in particular to a physical vapor deposition device. Background technique [0002] Physical vapor deposition (PVD) technology or sputtering (Sputtering) deposition technology is the most widely used type of thin film manufacturing technology in the semiconductor industry, and generally refers to the thin film preparation process that uses physical methods to prepare thin films. The ionization rate of metal atoms is a key indicator of this technology. [0003] High-density plasma can be excited by the coil inductive coupling method. Because there is usually a large radio frequency voltage change on the coil, there is a capacitive coupling between the coil and the generated plasma, which will have adverse effects such as reducing the plasma discharge efficiency and increasing the plasma's bombardment of the dielectric wall. . To reduce this capacitive coupling, a Faraday shield is usuall...

AI Technical Summary

Problems solved by technology

These deposits can cause particle contamination of the chamber and reduce process quality when these deposits flake off

When the voltage difference is high, the Faraday shield will be bombarded by a large number of high-energy ions, causing sputtering, resulting in wear and reduced life

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