Plasma processing device and temperature isolation device in plasma processing device

Abstract

The invention relates to a plasma processing device and a temperature isolation device in the plasma processing device. The plasma processing device is provided with a cavity which can be enclosed. The top part of the side wall of the cavity is provided with a ring cover. The top part of the cavity is composed of a dielectric window. Temperature difference exists between the ring cover and the dielectric window. The temperature isolation device is a heat insulation rim which is arranged on the top part of the ring cover. The top surface of the heat insulation rim is contacted with a part of the bottom surface of the dielectric window so that supporting to the dielectric window is realized. Therefore, heat conduction contact between the dielectric window and the ring cover is isolated, conduction of heat from the dielectric window to the ring cover is prevented and an objective of reducing temperature gradients from the central position to the edge position of the dielectric window is realized. Safety performance of the plasma processing device can be effectively enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to plasma processing equipment and a temperature isolation device therein. Background technique [0002] Currently, plasma processing for the purpose of thin film deposition, etching, and the like is widely practiced in semiconductor manufacturing processes. For example in figure 1 , figure 2 In the shown inductively coupled plasma processing equipment, a vacuum chamber 300 is provided, a base 600 is provided at the bottom of the chamber 300, an electrostatic clamp 700 is provided on the base 600, and a substrate 500 to be processed (such as is a semiconductor wafer, a glass substrate, etc.) placed on the electrostatic chuck 700 . The top of the chamber 300 is set as a dielectric window 100, generally made of ceramic material (Al 2 o 3 )constitute. A ring cover 200 is arranged on the top of the annular side wall of the chamber 300, a part of the top surfac...

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Problems solved by technology

As a result, a huge temperature gradient is generated between the central position of the dielectric window 100 and the edge position of the contact ring cover 200 on the dielectric window 100, which on the one hand causes the plasma formed in the reaction region below the dielectric window 100 to The problem of uneven distribution in the center and edge areas occurs, which affects the uniformity of the basic treatment; on the other hand, the temperature difference also causes the dielectric window 100 to deform, thereby causing the dielectric window 100 to crack and break the inside of the chamber 300 Substrates or other equipment that seriously affect the safety of the entire plasma processing facility

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