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Preparation method of CdTe/CdS/ZnS/SiO2 quantum dot

A reactor and solution technology, applied in the field of nanomaterials, can solve the problems of complex operation, decreased quantum yield, time-consuming, etc., and achieve the effect of rapid synthesis method

Inactive Publication Date: 2014-05-07
NANJING MEDICAL UNIV
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  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a CdTe / CdS / ZnS / SiO 2 The preparation method of QDs, exploring a double-shell QDs surface coated with SiO 2 A fast, simple, economical, and environmentally friendly direct synthesis method, thereby improving the time-consuming, complicated operation, and substantial decline in quantum yield of existing synthesis methods.

Method used

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  • Preparation method of CdTe/CdS/ZnS/SiO2 quantum dot
  • Preparation method of CdTe/CdS/ZnS/SiO2 quantum dot

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Embodiment Construction

[0024] Tellurium powder, NaBH 4 、Cd(Ac) 2 2.5 H 2 O, ZnSO 4 ·7H 2 O, NaS 7H 2 O. Tetraethyl orthosilicate (Sinopharm Chemical Reagent Co., Ltd.); Mercaptopropionic acid (98%, Aladdin Reagent Co., Ltd.).

[0025] This patent examines the effect of reaction ratio (Example 1-7), sodium sulfide solution drop rate (Example 6-9,), reflux temperature and reflux time (Example 8, 10-17) on CdTe / CdS / ZnS / SiO 2 The optical properties of QDs and the impact of particle size, specific implementation schemes and experimental results are shown in Table 1 and Table 2, respectively.

[0026] Table 1

[0027]

[0028] Table 2

[0029]

[0030] The above results prove that CdTe / CdS / ZnS / SiO with excellent performance can be synthesized by optimizing the experimental conditions. 2 QDs. The QDs synthesized under the optimal conditions (Example 12) have the characteristics of high quantum yield, narrow half-maximum width, and small particle size.

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Abstract

The invention discloses a preparation method of a CdTe / CdS / ZnS / SiO2 quantum dot. The preparation method comprises the steps: firstly, synthesizing mononuclear CdTeQDs by using cadmium acetate, mercaptopropionic acid and sodium hydrogen telluride in a water phase; then, transferring a reaction solution of CdTeQDs which is cooled to room temperature into a precursor which contains cadmium acetate, zinc sulfate and the mercaptopropionic acid and has the pH value of 9.0-10.0, uniformly mixing and stirring, adding a sodium sulphide solution, and carrying out backflow reaction to synthesize double-shell CdTe / CdS / ZnSQDs; and finally, directly adding tetraethyl orthosilicate in a reaction solution of the CdTe / CdS / ZnSQDs, and carrying out backflow reaction to synthesize CdTe / CdS / ZnS / SiO2QDs. The preparation method is used for synthesizing the CdTe / CdS / ZnS / SiO2QDs by using a direct method and is simple to operate, needs mild conditions, and is low in cost and friendly to the environment. The synthesized product CdTe / CdS / ZnS / SiO2QDs is good in water solubility, high in stability, uniform in size and excellent in optical performance.

Description

technical field [0001] The invention belongs to the field of nanomaterials, in particular to a CdTe / CdS / ZnS / SiO 2 Preparation methods of quantum dots. Background technique [0002] Quantum dots (quantum dots, QDs) have the advantages of high fluorescence intensity, broad excitation spectrum, narrow and symmetrical emission peak, large specific surface area, surface-modified functional groups, and good photostability, which make up for the shortcomings of traditional fluorescent dyes. become a new research hotspot. In recent years, QDs, as a new type of fluorescent probe, have made great progress in the fields of biomarkers, biodetection, and bioimaging (Q. J. Sun, Y. A. Wang, et al. Nat. Photonics , 2007 (1): 717-722). However, the higher specific surface area of ​​QDs has a greater impact on their structural and chemical properties, resulting in poor relative stability of QDs. Usually, the surface of QDs is a luminescence quenching center, and it is necessary to modify ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88
Inventor 胡琴魏芳弟刘丽云许贯虹杨静周萍刘利萍
Owner NANJING MEDICAL UNIV
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