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Surface polishing method for A-surface sapphire wafer

A sapphire wafer and surface polishing technology, which is applied in the field of crystal processing, can solve problems such as few researches, and achieve the effect of improving yield

Active Publication Date: 2014-04-30
TUNGHSU GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still little research on the processing technology of A-plane sapphire chemical mechanical polishing (CMP) in the industry, and the whole industry still focuses more on the processing research of C-plane sapphire substrates, so A-plane sapphire windows have always been It has become a new topic of research in the industry, so it is necessary to further explore the CMP processing technology of A-plane sapphire to meet the application requirements of A-plane sapphire in the window market in recent years

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] The surface polishing method of the A-side sapphire wafer, the method steps are as follows: (1) first configure the polishing liquid, the mass ratio of silica sol and deionized water in the polishing liquid is 1:1, and the pH value of the system is 9- 12. After the polishing liquid is prepared, it is necessary to keep the state of circulation and stirring to make the solid components in the polishing liquid evenly suspended; (2) Then stick the wafer on the ceramic plate on the copper polishing machine (model SPEEDFAM 360SPAW) to align the wafer The surface is roughly polished, and the center of the attached wafer and the ceramic disc are symmetrically distributed. The diamond polishing liquid with an average particle size of 2.5um is used for rough polishing, and the control pressure is 100g / cm 2 , the rotation speed is 30RPM, the flow rate is spray 5g every 5s, and the single-sided polishing is 20min; (3) Finally, perform fine polishing on a single-sided polishing machi...

Embodiment 2

[0017] The surface polishing method of the A-side sapphire wafer, the method steps are as follows: (1) first configure the polishing liquid, the mass ratio of silica sol and deionized water in the polishing liquid is 1:2, and the pH value of the system is 9- 12. After the polishing liquid is prepared, it is necessary to keep the state of circulation and stirring so that the solid components in the polishing liquid are evenly suspended; (2) Then paste the wafer on the ceramic plate on the copper polishing machine to roughly polish the surface of the wafer. The centers of the wafer and the ceramic disk are symmetrically distributed. The diamond polishing liquid with an average particle size of 3um is used for rough polishing, and the control pressure is 120g / cm 2 , the rotation speed is 40RPM, the flow rate is spray 5g every 5s, and the single-sided polishing is 25min; (3) Finally, perform fine polishing on a single-sided polishing machine, using the polishing liquid configured i...

Embodiment 3

[0019] The surface polishing method of the A-side sapphire wafer, the method steps are as follows: (1) first configure the polishing liquid, the mass ratio of silica sol and deionized water in the polishing liquid is 1:4, and the pH value of the system is 9- 12. After the polishing liquid is prepared, it is necessary to keep the state of circulation and stirring so that the solid components in the polishing liquid are evenly suspended; (2) Then paste the wafer on the ceramic plate on the copper polishing machine to roughly polish the surface of the wafer. The centers of the wafer and the ceramic disk are symmetrically distributed in the center. The rough polishing uses a diamond polishing liquid with an average particle size of 3.5um, and the control pressure is 150g / cm 2 , the rotation speed is 50RPM, the flow rate is spray 5g every 5s, and one-sided polishing is 30min; (3) Finally, perform fine polishing on a single-sided polishing machine, using the polishing liquid configur...

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PUM

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Abstract

The invention discloses a surface polishing method for an A-surface sapphire wafer. The method includes the steps: firstly, preparing polishing solution and then keeping a cycle stirring state to uniformly suspend solid components in the polishing solution; secondly, pasting the wafer on a ceramic plate and roughly polishing the surface of the wafer on a copper polisher; finally, precisely polishing the wafer on a single face polisher by the polishing solution. The A-surface sapphire wafer polished by the method is fine in surface flatness and TTV effect, the surface of the A-surface sapphire wafer can be polished to achieve a mirror effect, standard requirements of current industries are met, secondary damage such as edge breakage in the whole machining process is avoided, and accordingly, yield in the mass production process is greatly improved.

Description

technical field [0001] The invention relates to a surface polishing method of an A-plane sapphire wafer, belonging to the technical field of crystal processing. Background technique [0002] Sapphire single crystal, also known as white gemstone, the molecular formula is Al 2 o 3 , is composed of three oxygen atoms and two aluminum atoms in the form of covalent bonds, and its crystal structure is a hexagonal lattice structure. It is often used in A-face, C-face and R-face. Due to the wide optical transmission band of sapphire, it has good light transmission from near ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components, infrared devices, high-strength laser lens materials and photomask materials. It has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, and high melting point (2045 ° C). Therefore, it is often used as a material for optoelectronic compon...

Claims

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Application Information

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IPC IPC(8): B24B37/10
CPCB24B37/005B24B37/10
Inventor 杨华王禄堡
Owner TUNGHSU GRP
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