Method for controlling wafer cooling in semiconductor process

Abstract

The invention discloses a method for controlling cooling of a wafer in a semiconductor process. Aiming at different processes of oxidation, low-pressure chemical vapor deposition or low-temperature annealing, an unloading speed of a wafer boat is regulated according to a temperature before the boat is unloaded; simultaneously, according to different requirements of different processes on oxygen content, a cooling wind speed is regulated, nitrogen flow is controlled in high and low different ranges and in the unloading process, the wafer is sufficiently cooled and then is taken out in a bearing region. According to the invention, the cooling control parameters such as a wafer precooling temperature, the unloading speed, the nitrogen flow, the cooling wind speed and the like are optimized and combined to be utilized, so that the oxygen content is controlled to reach the standard, effective control on cooling of the wafer in the unloading stage of the process is implemented, the temperature of the wafer can be rapidly and effectively reduced and cooling time is controlled and shortened, therefore, wafer capacity is improved and nitrogen resources used as cooling media are obviously reduced.

Description

technical field [0001] The invention relates to a method for cooling a wafer in a vertical furnace equipment used for semiconductor integrated circuit processing, and more specifically, to a method for using targeted control means according to different semiconductor processes, opposing A method for cooling wafers in the boat drop stage of the furnace equipment process. Background technique [0002] With the development of semiconductor integrated circuit manufacturing technology, the feature size is continuously reduced, which makes the integration of chips higher and higher, and puts forward higher requirements for integrated circuit manufacturing and process equipment. The latest process development is increasingly subject to process equipment. restrict. In terms of vertical furnace equipment, in order to ensure the realization of the above process and material properties, the heat treatment process puts forward higher requirements for the indicators of vertical furnace ...

AI Technical Summary

Problems solved by technology

The aforementioned existing wafer cooling methods do not adjust the cooling conditions for various parameters that affect the cooling time for different processes of oxidation, LPCVD and low-temperature annealing, but use the same fixed cooling conditions

The disadvantage of this cooling method is that, on the one hand, during the cooling process, when the oxygen content reaches the control target, the set nitrogen flow rate and cooling wind speed will not change, resulting in excessive nitrogen consumption, especially for the oxidation process, which is harmful to the wafer. The oxygen content requirement in the load-bearing area is not high, which increases the consumption of nitrogen; on the other hand, the cooling conditions are not adjusted reasonably according to the characteristics of various parameters that affect the cooling time, resulting in the length of the cooling time cannot be grasped, and the Uncontrolled, its actual cooling efficiency is low, which adversely affects wafer throughput

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