Deep submicron device samples and preparation methods for in-situ transmission electron microscopy

Abstract

The invention discloses a method for preparing a deep sub-micron device sample for an in-situ transmission electron microscope. Ion beams are focused into ion beams with a small size for performing microdissection or grinding by utilizing an electromagnetic lens by adopting a focused ion beam system, accurate positioning sample preparation can be performed, and a deep sub-micron device is obtained. The method comprises the following steps: cutting and thinning the sample by adopting the focused ion beams so as to obtain a thinned sample, inclining a sample stage at 52+ / -(0.5-1.5) degrees relative to the finally thinned sample through conventional focused ion beams, and innovatively inclining the sample stage at 52+ / -7 degrees. The invention also provides a deep sub-micron device sample for the in-situ transmission electron microscope. The sample comprises multiple discrete nano devices which are regular in shape and have the width of less than 20nm and the thickness of less than 100nm. The sample is suitable for research on the in-situ transmission electron microscope and has the high significance in research on the performance of the deep sub-micron device.

Description

technical field [0001] The invention relates to the fields of semiconductor manufacturing technology and material analysis, in particular to a deep submicron device sample and a preparation method for an in-situ transmission electron microscope. Background technique [0002] Driven by Moore's Law, people pursue integrated circuit technology with higher integration and smaller feature scale. In 2012, Intel adopted the most advanced 22nm process and revolutionary 3D transistor technology, leading the revolution of semiconductor manufacturing technology. Mainstream semiconductor companies such as Intel are committed to the R&D and production of 14nm technology. At the same time, domestic SMIC is speeding up the production of 32-nanometer technology, and the Institute of Microelectronics of the Chinese Academy of Sciences is working on the research and development of 22-nanometer CMOS transistors. With the rapid development of semiconductor manufacturing technology, there is a...

AI Technical Summary

Problems solved by technology

However, current TEM samples prepared by focused ion beam systems are usually several microns wide, and a sample can only contain one device, which will limit research efficiency and limit nanoscale device research

How to prepare in situ TEM samples containing multiple, discrete, regular shapes, widths less than 20 nm, and thickness less than 100 nm remains a great challenge

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