Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal oxide thin film transistor array substrate, manufacturing method thereof, and display device

A transistor array and oxide thin film technology, which is applied in the manufacture of semiconductor/solid state devices, electric solid state devices, semiconductor devices, etc., can solve the problems of increasing the complexity of the fabrication process of the array substrate structure and reducing the productivity of the metal oxide thin film transistor array substrate. , to achieve the effect of improving the etching selection ratio, simplifying the structure and manufacturing process, and increasing the production capacity

Active Publication Date: 2016-03-02
BOE TECH GRP CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this increases the complexity of the structure of the array substrate and the manufacturing process, thereby reducing the production capacity of the metal oxide thin film transistor array substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal oxide thin film transistor array substrate, manufacturing method thereof, and display device
  • Metal oxide thin film transistor array substrate, manufacturing method thereof, and display device
  • Metal oxide thin film transistor array substrate, manufacturing method thereof, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0061] In order to make the technical problems, technical solutions, and advantages to be solved by the embodiments of the present invention clearer, a detailed description will be given below with reference to the drawings and specific embodiments.

[0062] Embodiments of the present invention provide a metal oxide thin film transistor array substrate, a manufacturing method thereof, and a display device, which can simplify the structure and manufacturing process of the metal oxide thin film transistor array substrate, and improve the productivity of the metal oxide thin film transistor array substrate.

[0063] The present invention provides a method for manufacturing a metal oxide thin film transistor array substrate. The method includes: forming an active layer composed of crystalline metal oxide.

[0064] In the array substrate made by the present invention, the active layer is composed of crystalline metal oxide, and the acid etching rate of the metal oxide after the amorphous s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a metal oxide thin film transistor array substrate and a manufacturing method and a display method thereof, and belongs to the field of manufacturing process of thin film transistors. The manufacturing method of the metal oxide thin film transistor array substrate comprises the step of forming an active layer which is formed by crystallizing metal oxides. By adopting the technical scheme, the structure and the manufacturing process of the metal oxide thin film transistor array substrate are simplified, and the productivity of the metal oxide thin film transistor array substrate is improved.

Description

Technical field [0001] The invention relates to the field of thin film transistor manufacturing technology, in particular to a metal oxide thin film transistor array substrate, a manufacturing method thereof, and a display device. Background technique [0002] ThinFilm Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and it occupies a leading position in the current flat panel display market. [0003] In recent years, TFT-LCD has achieved rapid development, especially LCD TVs have developed more rapidly, and their size and resolution have been continuously improved. Large-size, high-resolution LCD TVs have become a mainstream of TFT-LCD development. With the continuous increase in the size and resolution of TFT-LCD, in order to improve the display quality, it is necessary to adopt a higher frequency drive circuit. At the same time, the delay of the image signal becomes more serious, and the signal ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
Inventor 刘翔
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com