Method for preparing super-hydrophobic surface on silicon wafer based on laser interference nanometer lithography

Abstract

The invention discloses a method for preparing a super-hydrophobic surface on a silicon wafer based on laser interference nanometer lithography. The method comprises the following steps: (1) simulating a four-beam interference pattern by using Matlab (Matrix Laboratory), setting parameters to simulate an ideal lattice model; building a laser interference optical system according to simulation parameters; emitting a beam of laser through a laser, splitting the beam of laser into four beams of laser through a beam splitting system, in which incidence angles Theta1, Theta2, Theta3 and Theta4 are equal to 15 degrees; phase angles which are polarization angles Psi1, Psi2, Psi3 and Psi4 are equal to 90 degrees; the light intensity energy density ratio of four beams of laser is 1:1:1:1; and etching a lattice structure on a silicon wafer through four beams of laser; (2) removing dust pollutants on the surface of the etched silicon wafer by using ultrasonic vibration; (3) processing the etched silicon wafer by using HF and removing SiO2 to obtain a micro-nano surface structure with a contact angle up to 150 degrees.

Description

Technical field [0001] The invention relates to a method for preparing a super-hydrophobic surface on a silicon wafer based on laser interference nanolithography, in particular to directly etch the silicon wafer by using a laser interference nanolithography method, and undergo hydrofluoric acid treatment to control the interference light Strong and hydrofluoric acid treatment time to achieve a superhydrophobic structure with a contact angle of up to 150°. technical background [0002] In recent years, the self-cleaning properties of superhydrophobic surfaces have aroused great interest of researchers, and this effect has been widely used in production and life. Monocrystalline silicon is widely used in the preparation of solar cells, semiconductor materials, and microelectronics technology. Therefore, the preparation of super-hydrophobic structures on the surface of silicon has a wide range of application prospects. At present, the theoretical research on superhydrophobic struct...

AI Technical Summary

Problems solved by technology

At present, a lot of achievements have been made in the theoretical research of superhydrophobic structure. In the field of preparing superhydrophobic structure on silicon surface, there are mainly the following preparation techniques: template etching method, vapor deposition method, electrochemical method and automatic method. Assembly technology, etc., the preparation method has problems such as harsh experimental conditions, difficult implementation, cumbersome steps, and high cost. The method of preparing a superhydrophobic structure on a silicon wafer by laser interference nanolithography overcomes the shortcomings of the prior art, and the steps are simple and easy to prepare. Short cycle

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