Array substrate, manufacturing method thereof and display device

Abstract

The invention discloses an array substrate manufacturing method. The array substrate manufacturing method comprises the steps of: forming a pattern including a data line, a source electrode and a drain electrode on a substrate; forming a pattern including an active layer; forming a pattern insulating a grid insulating layer and exposing a region of the drain electrode, which is connected with a to-be-formed anode; forming a pattern including a grid line, a grid electrode and the anode; forming a pattern including a pixel definition layer, an organic material layer and a transparent cathode. The invention also discloses an array substrate and a display device. The array substrate manufacturing method reduces number of times of mask, and therefore saves manufacturing technological process and manufacturing cost.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] Traditional top-emitting AMOLED display devices such as figure 1 As shown, it includes: the first gate 2, the second gate 2' and the gate line (not shown in the figure) formed on the substrate 1, the first gate 2, the second gate 2' and the gate The gate insulating layer 3 above the line, the first active layer 4 and the second active layer 4' formed on the gate insulating layer 3, the first active layer 4 and the second active layer 4' formed on the The etch barrier layer 5, the first source and drain layer 6 (including the first source and the first drain) and the second source and drain layer 6' (including the second source and the first drain) formed on the etch barrier 5 two drains), a passivation layer 7 formed on the first source and drain layer 6 and the seco...

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Problems solved by technology

[0004] Among them, the active layer is usually an oxide semiconductor material, that is, the formed TFT is OxideTFT, so an additional etching stopper layer 5 is needed to prevent the oxide semiconductor material from being damaged when the source and drain layers are etched, which affects the TFT. performance

Therefore, the fabrication of the above-mentioned AMOLED display device usually requires 7 times of mask process (mask) formation (gate, via hole on the gate insulating layer, active layer, via hole on the etch stop layer, source and drain layer, passivation layer Vias on the upper layer and pixel definition layer each mask), the process is complex and the cost is high

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