Test method and test system for LED wafer
A test method and wafer technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the error of LED wafer Mapping full measurement value, affect the production cycle, consume labor and material costs, etc. problems, to achieve the effect of improving production efficiency and product yield, and solving the problem of abnormal control lag
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[0059] First the parameters involved in the implementation steps of the present invention are described as follows:
[0060] WL.offset: the wavelength correction function after differentiation;
[0061] IV.gain: Light intensity correction function after differentiation;
[0062] WL.std: When the LED wafer to be tested is sampled by the standard sampling machine, the wavelength value of the grain is sampled;
[0063] IV.std: When the LED wafer to be tested is sampled by a standard sampling machine, the light intensity value of the grains is sampled;
[0064] WL.smap: the wavelength value of sampling grains tested on the Mapping full testing machine;
[0065] IV.smap: Sampling the light intensity value of the crystal grains tested by the Mapping full testing machine;
[0066] WL.map: the initial wavelength value of the LED wafer to be tested in the Mapping full test machine;
[0067] IV.map: The initial light intensity value of the LED wafer to be tested in the Mapping full ...
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