Preparation method for large-size ultrathin bismuth selenide nanosheet
A technology of bismuth selenide and nanosheets, which is applied in nanotechnology, nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems of small size, poor uniformity, and large thickness of nanosheets, and achieves good crystallinity and low cost. , the effect of simple process
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[0022] A large size ultra-thin Bi 2 Se 3 The preparation method of the nanosheets is prepared by a gas phase transport method, comprising the following steps:
[0023] Step 1. Weigh a certain amount of bismuth powder and selenium powder according to the molar ratio of 2:3, and clean the Si / SiO 2 Substrate, quartz tube, and adhere the substrate to the quartz block with high temperature resistant glue;
[0024] Step 2, put the bismuth powder and selenium powder obtained in step 1 at one end of the quartz tube, and put the Si / SiO obtained in step 1 vertically at the other end 2 Substrate, the quartz tube is evacuated and sealed;
[0025] Step 3, put the quartz tube obtained in step 2 into a high-vacuum tube furnace, heat it at a set temperature for a certain period of time according to a certain heating rate, and then cool it with the furnace;
[0026] Step 4, take out the quartz tube obtained in step 3, and cut it with a diamond cutter to obtain a large-sized ultra-thin Bi t...
Embodiment 1
[0029] Step 1. Weigh 0.2mmol (0.0418g) of bismuth powder and 0.3mmol (0.0237g) of selenium powder. Ultrasonic cleaning of quartz tube, Si / SiO 2 Substrate for 5 minutes, and adhere the substrate to the quartz block with high temperature resistant glue;
[0030] Step 2. Put bismuth powder and selenium powder at one end of the quartz tube, and vertically put Si / SiO at the other end 2 For the substrate, use a molecular pump to evacuate the quartz tube, and immediately seal it with an acetylene flame;
[0031] Step 3. Put the sealed quartz tube into a high-vacuum tube furnace, set the temperature at the raw material end to 700°C, set the temperature at the substrate end to 350°C, heat at a rate of 10-15°C / min, keep it warm for 24 hours, and cool with the furnace;
[0032] Step 4. Take out the fired quartz tube and cut it with a diamond cutter to obtain a large-sized ultra-thin Bi tube. 2 Se 3 Nanosheet Si / SiO 2 substrate.
[0033] The diffraction peak and Bi of the X-ray diff...
Embodiment 2
[0037] The difference between this embodiment and embodiment 1 is that in step 3, the temperature at the raw material end is 600° C., and the temperature at the substrate end is set at 350° C., and the others are the same as in embodiment 1.
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