Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method

A silicon-based gallium arsenide and epitaxial material technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor device manufacturing, final product manufacturing, etc., can solve the problem of substrate transfer process pollution, large footprint, and high purification level requirements for clean workshops, etc. question

Active Publication Date: 2014-02-19
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to provide a silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method, which can effectively solve the problem of low production efficiency of process equipment, large floor area and substrate The transfer has the disadvantages of process pollution and high purification level requirements for clean workshops

Method used

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  • Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method
  • Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method
  • Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method

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Experimental program
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Effect test

Embodiment 1

[0086] see figure 1 The silicon-based gallium arsenide epitaxial material and device manufacturing equipment include a UHVCVD reaction chamber 1; the UHVCVD reaction chamber 1 communicates with a vacuum transition chamber 2, and the vacuum transition chamber 2 communicates with a wafer buffer chamber 3, The wafer buffer chamber 3 is communicated with the central transfer chamber 4; the central transfer chamber 4 is also communicated with the heat treatment chamber 5, the MOCVD reaction chamber chamber 6 and the laminar flow hood 7; gate valves are arranged between the chambers communicated with each other 8. A gate valve 8 is also provided between the laminar flow hood 7 and the central transfer chamber 4; a vacuum manipulator 9 is provided in the central transfer chamber 4 and the vacuum transition chamber 2.

[0087] Wherein, the UHVCVD reaction chamber 1 is provided with a mechanical pump, a molecular pump and an ion pump, and the background vacuum degree of the UHVCVD reac...

Embodiment 2

[0090] see figure 2 , based on the silicon-based gallium arsenide epitaxial material and device manufacturing method of the device described in embodiment 1, comprising the steps of:

[0091] (1) Use the vacuum manipulator in the central transfer chamber to transfer the graphite tray carrying the silicon substrate from the laminar flow hood to the wafer buffer chamber:

[0092] ①Laminar flow hood loading: load the cleaned silicon substrate on the graphite tray in the laminar flow hood;

[0093] ②Central transfer chamber transfer: the vacuum manipulator in the central transfer chamber transfers the graphite tray carrying the silicon substrate from the laminar flow hood to the wafer buffer chamber for temporary storage and keeps the vacuum within 25mtorr;

[0094] (2) Transfer the graphite tray carrying the silicon substrate in the cache chamber to the vacuum transition chamber for vacuum transition of the silicon substrate, and remove the adsorbed gas on the silicon substrate...

Embodiment 3

[0105] see image 3 The silicon-based gallium arsenide epitaxial material and device manufacturing equipment include a UHVCVD reaction chamber 1; the UHVCVD reaction chamber 1 communicates with a vacuum transition chamber 2, and the vacuum transition chamber 2 communicates with a central transfer chamber 4; The central transfer chamber 4 is also communicated with the wafer buffer chamber 3, the heat treatment chamber 5, the MOCVD reaction chamber 6 and the laminar flow cover 7; a gate valve 8 is arranged between the chambers communicated with each other, and the laminar flow cover 7 is connected to the central transfer chamber. A gate valve 8 is also provided between the chambers 4 ; a vacuum manipulator 9 is provided in the central transfer chamber 4 ; a bearing base 10 and a push rod 11 are provided in the vacuum transition chamber 2 .

[0106] Wherein, the UHVCVD reaction chamber 1 is provided with a mechanical pump, a molecular pump and an ion pump, and the background vacu...

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Abstract

The invention discloses silicon-based gallium arsenide epitaxial material and device manufacturing equipment. The manufacturing equipment comprises a UHVCVD reaction cavity; the UHVCVD reaction cavity is communicated with a vacuum transition cavity, the vacuum transition cavity is communicated with a wafer caching cavity, and the wafer caching cavity is communicated with a central conveying cavity; the central conveying cavity is further communicated with a heat treatment cavity, an MOCVD reaction cavity and a laminar flow hood; brake valves are arranged between the cavities which are mutually communicated, and brake valves are further arranged between the laminar flow hood and the central conveying cavity; vacuum mechanical arms are arranged in the central conveying cavity and the vacuum transition cavity. According to the silicon-based gallium arsenide epitaxial material and device manufacturing equipment and a manufacturing method, the defects that in an existing silicon-based gallium arsenide epitaxial material and device manufacturing process, processing equipment is low in production efficiency and large in occupied area, pollution is caused in the process of transferring a substrate, and the pollution degree requirements of a clean workshop are high are overcome.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and optoelectronics, and in particular relates to a silicon-based gallium arsenide epitaxial material and device manufacturing equipment and a manufacturing method, in particular to a silicon-based gallium arsenide solar cell manufacturing equipment and a manufacturing method. Background technique [0002] Silicon and gallium arsenide are the two mainstream materials in the modern semiconductor industry. Silicon material has the advantages of good thermal conductivity, high mechanical strength, few defects, large substrate size, and low price, and gallium arsenide material has the advantages of high electron mobility, band gap and good microwave performance. Epitaxy of gallium arsenide-based materials on silicon offers the tantalizing prospect of combining the advantages of both the elemental semiconductor material silicon and the compound semiconductor material gallium arsenide. Silicon...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C16/54
CPCH01L21/2056H01L21/67161H01L31/184Y02P70/50
Inventor 陈峰武魏唯程文进罗才旺
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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