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Biosensor based on tunneling field effect transistor and preparation method of biosensor

A tunneling field effect and biosensor technology, applied in the field of tunneling field effect transistor-based biosensors and its preparation, can solve problems affecting the performance of biosensors, insensitivity to channel surface charge changes, etc., and achieve steep sub- Sensitivity to changes in threshold slope, channel surface charge, and high-sensitivity detection effects

Inactive Publication Date: 2014-02-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the subthreshold slope of the traditional planar field effect transistor (FET) is relatively stable, which makes the device insensitive to the change of the channel surface charge and affects the performance of the biosensor.

Method used

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  • Biosensor based on tunneling field effect transistor and preparation method of biosensor
  • Biosensor based on tunneling field effect transistor and preparation method of biosensor
  • Biosensor based on tunneling field effect transistor and preparation method of biosensor

Examples

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Embodiment 1

[0041] The invention provides a method for preparing a biosensor based on a tunneling field effect transistor, the preparation method at least including the following steps:

[0042] Step 1, preparing a tunneling field effect transistor as a converter;

[0043] Step 2, using a surface modifier to activate and modify the surface of the channel in the tunneling field effect transistor.

[0044] The preparation method of the tunneling field-effect transistor-based biosensor provided by the present invention will be described in detail below with reference to specific drawings.

[0045] First, step 1 is performed to prepare a tunneling field effect transistor as a converter.

[0046] The specific process of preparing the tunneling field effect transistor is as follows:

[0047] 1) An SOI substrate is provided, and the SOI substrate includes a top silicon layer, a buried oxide layer and a bottom silicon layer.

[0048] see figure 1 , in the provided SOI substrate 1 , there are ...

Embodiment 2

[0065] The present invention also provides a biosensor based on a tunneling field effect transistor, which is made by using the preparation method provided in Example 1. The biosensor based on a tunneling field effect transistor at least includes:

[0066] The converter is a tunneling field effect transistor;

[0067] The surface modifier covers the surface of the channel in the tunneling field effect.

[0068] Preferably, the tunneling field effect transistor includes at least:

[0069] SOI substrate 1, including top layer silicon 11, buried oxide layer 12 and bottom layer silicon 13;

[0070] The source 3 and the drain 2 are formed on both sides of the top layer silicon 11;

[0071] a channel 4 located between the source 3 and the drain 2;

[0072] a gate dielectric layer 5 formed on the surface of the channel 4;

[0073] The back gate 6 is formed on the back side of the underlying silicon 13 .

[0074] Further, the surface modifier is 3-aminopropyltriethoxysilane, of c...

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Abstract

The invention provides a biosensor based on a tunneling field effect transistor and a preparation method of the biosensor. The preparation method of the biosensor at least comprises the steps of firstly, preparing a tunneling field effect transistor as a converter; and then carrying out activated modification on the surface of a channel in the tunneling field effect transistor by adopting a surface modification agent, wherein the step of preparing the tunneling field effect transistor specifically comprises the procedures of providing an SOI (Silicon On Insulator) substrate, wherein the SOI substrate comprises a top layer silicon, a buried oxygen layer and a bottom layer silicon; forming a gate dielectric layer on the surface of the top layer silicon; carrying out ion injection on the top layer silicon at two sides of the gate dielectric layer by adopting an ion injection process to form a source electrode and a leak electrode, defining the top layer silicon of the gate dielectric layer, which is not subjected to the ion injection, as a channel; and forming a back gate on the surface of the bottom layer silicon. The tunneling field effect transistor provided by the invention is abrupt in sub-threshold slope, and is sensitive in change of charges on the surface of the channel, thereby enabling the biosensor to be capable of detecting a biomolecule at high sensitivity.

Description

technical field [0001] The invention relates to the technical field of biosensing, in particular to a biosensor based on a tunneling field effect transistor and a preparation method thereof. Background technique [0002] Biosensor is an interdisciplinary subject that combines biologically active materials (enzymes, proteins, DNA, antibodies, antigens, biofilms, etc.) with physical and chemical transducers. The method and monitoring method are also fast and micro-molecular methods at the molecular level of substances. In the future economic development, biosensing technology will be a new growth point between confidence and biotechnology. It has broad application prospects in researches such as protection, biotechnology, and biochips. [0003] Specifically, a biosensor (Biosensor) is an instrument that is sensitive to biological substances and converts its concentration into an electrical signal for detection. It is an analysis tool or system composed of immobilized biosen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
Inventor 俞文杰刘畅赵清太王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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