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Biosensor based on vertical-structure tunneling field effect transistor and preparation method thereof

A technology of tunneling field effect and biosensor, applied in the field of biosensor and its preparation based on vertical structure tunneling field effect transistor, can solve the problem of insensitivity to the change of channel surface charge, and achieve the goal of channel surface charge Sensitive to changes, steep subthreshold slope, and improved work performance

Active Publication Date: 2014-02-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a biosensor based on a vertical structure tunneling field effect transistor and its preparation method, which is used to solve the problem of tunneling field effect transistors in the prior art. The problem of insensitivity to the change of charge

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  • Biosensor based on vertical-structure tunneling field effect transistor and preparation method thereof
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  • Biosensor based on vertical-structure tunneling field effect transistor and preparation method thereof

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preparation example Construction

[0058]The invention provides a method for preparing a biosensor based on a vertical structure tunneling field effect transistor, such as figure 1 Shown is a schematic flow chart, and the preparation method of the biosensor at least includes the following steps:

[0059] S1, preparing a tunneling field effect transistor with a vertical structure as a converter, the channel in the tunneling field effect transistor is suspended, and the channel forms a vertical structure with the source and the drain;

[0060] S2, performing surface activation modification on the surface of the channel by using a surface modifier.

[0061] The fabrication method of the vertical structure tunneling field effect transistor of the present invention will be described in detail below with reference to the specific drawings.

[0062] First, step S1 is performed to prepare a tunneling field effect transistor with a vertical structure as a converter, the channel in the tunneling field effect transistor ...

Embodiment 2

[0089] The present invention also provides a biosensor based on a vertical structure tunneling field effect transistor, which is made by using the preparation method provided in Example 1. The biosensor based on a vertical structure tunneling field effect transistor at least includes:

[0090] The converter is a tunneling field effect transistor with a vertical structure; the channel in the tunneling field effect transistor is suspended, and the channel forms a vertical structure with the source and the drain;

[0091] The surface modifier covers the surface of the channel.

[0092] Preferably, the tunneling field effect transistor of the vertical structure at least includes:

[0093] The SGOI substrate 1 includes a buried oxide layer 11 and P-type heavily doped SiGe12 located on both sides of the buried oxide layer 11, wherein the P-type heavily doped SiGe12 on one side is defined as a source 121;

[0094] A channel 21 with a nanowire or nanorod structure suspended over the ...

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Abstract

The invention provides a biosensor based on a vertical-structure tunneling field effect transistor and a preparation method thereof. The preparation method at least comprises the following steps: step one, preparing the vertical-structure tunneling field effect transistor as a converter, wherein a channel inside the tunneling field effect transistor is suspended, and a vertical structure is formed by the channel, a source electrode and a drain electrode; and step two, carrying out surface activation modification on the surface of the channel by a surface modifying agent. According to the biosensor provided by the invention, the source electrode, the channel and the drain electrode inside the tunneling field effect transistor as the converter adopt the vertical structure, and the channel is in a suspended structure, so that the subthreshold slope of the device is steep; therefore, the induction of the device to the change of surface charges of the channel is sensitive, and the working performance of the biosensor is further improved.

Description

technical field [0001] The invention relates to the technical field of biosensing, in particular to a biosensor based on a vertical structure tunneling field effect transistor and a preparation method thereof. Background technique [0002] Biosensor is an interdisciplinary subject that combines biologically active materials (enzymes, proteins, DNA, antibodies, antigens, biofilms, etc.) with physical and chemical transducers. The method and monitoring method are also fast and micro-molecular methods at the molecular level of substances. In the future economic development, biosensing technology will be a new growth point between confidence and biotechnology. It has broad application prospects in researches such as protection, biotechnology, and biochips. [0003] Specifically, a biosensor (Biosensor) is an instrument that is sensitive to biological substances and converts its concentration into an electrical signal for detection. It is an analysis tool or system composed of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00G01N27/414H01L21/336H01L29/10H01L29/08H01L29/78
Inventor 赵清太俞文杰刘畅王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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