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Method for preparing topological insulator Bi2Se3 and perovskite oxide La0.7Sr0.3MnO3 composite structure

A technology of perovskite oxides and topological insulators, applied in chemical instruments and methods, manganese oxide/manganese hydroxide, binary selenium/tellurium compounds, etc. The problem of high energy consumption and other problems can be achieved to reduce the preparation cost, low energy consumption, and simple preparation process.

Inactive Publication Date: 2014-02-05
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods for preparing composite structures are strongly limited by the base material, and have high requirements for test conditions such as equipment and preparation environment, and the preparation cycle is long, energy consumption is high, preparation cost is high, and large-scale production cannot be carried out.

Method used

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  • Method for preparing topological insulator Bi2Se3 and perovskite oxide La0.7Sr0.3MnO3 composite structure
  • Method for preparing topological insulator Bi2Se3 and perovskite oxide La0.7Sr0.3MnO3 composite structure
  • Method for preparing topological insulator Bi2Se3 and perovskite oxide La0.7Sr0.3MnO3 composite structure

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Experimental program
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Effect test

Embodiment 1

[0030] A kind of preparation topological insulator Bi 2 Se 3 With perovskite oxide La 0.7 Sr 0.3 MnO 3 The method of composite structure, its steps are:

[0031] a. Preparation of topological insulator single crystal: weigh high-purity bismuth powder and high-purity selenium powder at a molar ratio of 2:3 in an argon glove box, and grind and press them; then seal it with an air pressure of 0.9×10 -2 Pa vacuum quartz tube, then place the vacuum quartz tube in a tube furnace to slowly heat to 850 ℃ and keep it for 8 hours, and then evenly cool down to 620 ℃ in 24 hours, and then quench with cold water to obtain Bi 2 Se 3 Single chip

[0032] b. Preparation of perovskite oxide precursor powder: Dissolve lanthanum oxide, strontium carbonate, and manganese acetate into a nitric acid solution at a ratio of lanthanum, strontium, and manganese ions at a ratio of 7:3:10, and then add them after uniform mixing A complexing agent composed of citric acid and ethylene glycol with a molar ratio o...

Embodiment 2

[0038] A kind of preparation topological insulator Bi 2 Se 3 With perovskite oxide La 0.7 Sr 0.3 MnO 3 The method of composite structure, its steps are:

[0039] a. Preparation of topological insulator single crystal: weigh high-purity bismuth powder and high-purity selenium powder at a molar ratio of 2:3 in an argon glove box, grind and press them; then seal it with an air pressure of 0.5×10 -2 Pa vacuum quartz tube, then put the vacuum quartz tube in a tube furnace to slowly heat to 840 ℃ and keep it for 6 hours, and then take 20 hours to evenly cool down to 550 ℃, and then quench with cold water to obtain Bi 2 Se 3 Single chip

[0040] b. Preparation of perovskite oxide precursor powder: Dissolve lanthanum oxide, strontium carbonate, and manganese acetate into a nitric acid solution at a ratio of lanthanum, strontium, and manganese ions at a ratio of 7:3:10, and then add them after uniform mixing A complexing agent composed of citric acid and ethylene glycol with a molar ratio of...

Embodiment 3

[0046] A kind of preparation topological insulator Bi 2 Se 3 With perovskite oxide La 0.7 Sr 0.3 MnO 3 The method of composite structure, its steps are:

[0047] a. Preparation of topological insulator single crystal: weigh high-purity bismuth powder and high-purity selenium powder at a molar ratio of 2:3 in an argon glove box, grind and press them; then seal it with an air pressure of 0.2×10 -2 Pa in the vacuum quartz tube, then place the vacuum quartz tube in a tube furnace to slowly heat to 870℃ and keep it for 10h, then take 25 hours to evenly cool down to 650℃, and then quench with cold water to obtain Bi 2 Se 3 Single chip

[0048] b. Preparation of perovskite oxide precursor powder: Dissolve lanthanum oxide, strontium carbonate, and manganese acetate into a nitric acid solution at a ratio of lanthanum, strontium, and manganese ions at a ratio of 7:3:10, and then add them after uniform mixing A complexing agent composed of citric acid and ethylene glycol with a molar ratio of ...

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Abstract

The invention relates to a method for preparing a topological insulator Bi2Se3 (bismuth selenide) and perovskite oxide La0.7Sr0.3MnO3 composite structure. The method comprises the following steps of a, measuring, grinding and tabletting bismuth powder and selenium powder in an argon glove box according to a molar ratio of 2:3, sealing the bismuth powder and selenium powder into a vacuum quartz tube, and then sintering and quenching the bismuth powder and selenium powder to prepare Bi2Se3 single crystal wafers; b, dissolving lanthana, strontium carbonate and manganese acetate into a nitric acid solution according to a molar ratio of 7:3:10, adding a complexing agent, and placing the mixture into a furnace to be sintered to obtain La0.7Sr0.3MnO3 precursor powder; c, mixing the prepared precursor powder with a little silane coupling agent; d, adding silicone rubber into the precursor powder obtained in step c, uniformly mixing the silicone rubber and the precursor power, and tabletting the mixture; e, laminating the substrate obtained in step d with the Bi2Se3 single crystal wafers, pressurizing and solidifying the laminated substrate, and then stripping the Bi2Se3 single crystal wafers by utilizing an adhesive tape. The preparation process of the method is simple, the preparation period is short, easiness in operation can be realized, and the preparation cost is greatly reduced.

Description

Technical field [0001] The invention relates to a method for preparing a composite structure of a topological insulator and perovskite oxide, in particular to a topological insulator Bi 2 Se 3 And perovskite oxide La 0.7 Sr 0.3 MnO 3 Composite structure method. Background technique [0002] As a novel quantum state of matter, topological insulators have received extensive attention since they came out. Due to the invariant topological protection of the time reversal of its surface state acceptor state, non-magnetic impurities will not destroy the properties of its surface state, making it widely used in future low-energy spintronic devices, fault-tolerant quantum communications and quantum computers. prospect. Topological insulators are also closely connected with recent research hotspots such as the anomalous sub-spin Hall effect, magnetic monopole effect, topological magnetoelectric effect, etc. These features are all realized by using the topological properties of the electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04C01G45/02C30B1/10C30B29/46
Inventor 羊新胜魏占涛赵勇张敏吕莉
Owner SOUTHWEST JIAOTONG UNIV
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