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Oxide thin film transistor, manufacturing method thereof, array substrate and display device

A technology of oxide film and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., and can solve the problems of long and difficult channel length

Active Publication Date: 2014-01-29
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the channel length of existing oxide thin film transistors is relatively long. For ultra-high-definition products such as 400PPI-500PPI, and in pixel structures with a pixel pitch of less than 21um, existing oxide thin-film transistors are used in ultra-high-definition products. more difficult

Method used

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  • Oxide thin film transistor, manufacturing method thereof, array substrate and display device
  • Oxide thin film transistor, manufacturing method thereof, array substrate and display device
  • Oxide thin film transistor, manufacturing method thereof, array substrate and display device

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Embodiment 1

[0040] In order to solve the above technical problems, an embodiment of the present invention provides a method for fabricating an oxide thin film transistor, which includes:

[0041] 110: sequentially forming a gate and a gate insulating layer on the substrate.

[0042] 120: Form an oxide semiconductor thin film on the gate insulating layer, form a first photoresist in the active layer region, and make the thickness of the first photoresist in the channel region greater than that of the first photoresist in the non-channel region glue;

[0043] 130: removing the oxide semiconductor film in the non-active layer region, forming a pattern of the active layer, removing the first photoresist in the non-channel region, and retaining the first photoresist in the channel region;

[0044] 140: Form a source-drain metal film and a second photoresist sequentially above the pattern of the active layer, and remove part of the source-drain metal film corresponding to the remaining first p...

Embodiment 2

[0065] An embodiment of the present invention also provides an oxide thin film transistor, such as image 3 , Figure 4 shown, including:

[0066] A gate 1 is sequentially formed from one side of the substrate 14 , a gate insulating layer 4 is formed on a side of the gate 1 away from the substrate 14 , and an active layer 5 is formed on a side of the gate insulating layer 4 away from the gate 1 .

[0067] A source 2 and a drain 3 are formed on the side of the active layer 5 away from the gate insulating layer 4, and both the source 2 and the drain 3 are directly connected to the active layer 5. The source layer 5 is an oxide semiconductor material, such as IGZO.

[0068] The length S of the channel 12 between the source 2 and the drain 3 is 5-6um. Specifically, if the current precision allows, the distance between the source 2 and the drain 3 is 3 μm, and the width of the source 2 in the channel region is 1-1.5 μm. μm, the width of the drain 3 in the channel region is 1˜1....

Embodiment 3

[0076] An embodiment of the present invention also provides an array substrate, including the oxide thin film transistor described in Embodiment 2 above.

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Abstract

The invention provides an oxide thin film transistor, a manufacturing method of the oxide thin film transistor, an array substrate and a display device, and relates to the technical field of liquid crystal display. The manufacturing method of the oxide thin film transistor includes the steps that a grid electrode, a grid insulating layer and an oxide semiconductor thin film are sequentially formed in a substrate; first photoresist is formed in an active layer area of the oxide semiconductor thin film, and a channel area is thicker than a non-channel area; the first photoresist of the channel area is reserved; a source drain metal thin film is formed on active layer patterns, second photoresist on the source drain metal thin film is reserved, and the edge of the first photoresist of the channel area is covered with the source drain metal thin film; source electrode patterns and drain electrode patterns are obtained. According to the oxide thin film transistor, the manufacturing method of the oxide thin film transistor, the array substrate and the display device, when the initial source electrode patterns and the initial drain electrode patterns are formed, the photoresist is utilized to replace a protective layer to protect an active layer, the final source electrode patterns and the final drain electrode patterns are formed through a photoresist stripping technology, and therefore the length of a channel of the oxide thin film transistor is shortened.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to an oxide thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] In liquid crystal display technology, ADS (Advanced Super Dimension Switch, advanced ultra-dimensional field switching technology) mode gradually replaces TN (Twisted Nematic) liquid crystal mode with the advantages of high transmittance, wide viewing angle, fast response speed and low power consumption, and has become One of the important technologies in the field of liquid crystal display. [0003] In the ADS mode, the oxide thin film transistor forms a protective layer 13 on the IGZO (indium gallium zinc oxide, indium gallium zinc oxide) layer forming the channel, such as figure 1 , figure 2 Shown are respectively the cross-sectional view and the top view of the existing oxide thin film transistor, wherein the source 2 and ...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336H01L29/43
CPCH01L27/1225H01L29/66969H01L29/7869H01L29/78696H01L27/1288H01L29/41733H01L29/78609H01L21/441H01L21/467
Inventor 崔贤植林允植
Owner BOE TECH GRP CO LTD
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