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Preparation method of composite structure of photoresist film and substrate for LIGA (Lithographie, Galvanoformung and Abformung) technology

A composite structure, photoresist technology, applied in microlithography exposure equipment, processes for producing decorative surface effects, microstructure technology, etc., can solve the problem of limited bonding area, peeling, and collapse of PMMA photoresist column structure and other issues to achieve the effect of improving research level and large aspect ratio

Active Publication Date: 2014-01-01
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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Problems solved by technology

In the composite structure of the above PMMA photoresist film and substrate, the PMMA photoresist column structure can only contact and adhere to the surface of metal substrates such as titanium, and the bonding area is limited, which seriously affects the connection between the PMMA photoresist column structure and the metal substrate. The bonding force of the surface causes the structure of PMMA photoresist pillars with high aspect ratio to collapse or fall off

Method used

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  • Preparation method of composite structure of photoresist film and substrate for LIGA (Lithographie, Galvanoformung and Abformung) technology

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Embodiment

[0026] Such as figure 1 as shown, figure 1 It is a flow chart of a method for preparing a composite structure of a photoresist film and a substrate for LIGA technology according to an embodiment of the present invention, and the method includes:

[0027] Step 1: Clean the 500-mesh stainless steel wire mesh and the 1 mm thick PMMA photoresist sheet ultrasonically, and dry them with a hair dryer.

[0028] Step 2: Place the 5 mm thick stainless steel flat plate horizontally in the oven, and place the PTFE film flat on its surface.

[0029] Step 3: Place a 1 mm thick PMMA photoresist sheet on the PTFE film, and place a wire mesh on top of the PMMA sheet.

[0030] Step 4: Place a polytetrafluoroethylene film on the wire mesh, and cover the polytetrafluoroethylene film with a 5 mm thick stainless steel sheet cover; the polytetrafluoroethylene film prevents the PMMA photoresist from melting through the stainless steel mesh and The adhesion of the stainless steel flat backing plate...

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Abstract

The invention discloses a preparation method of a composite structure of a photoresist film and a substrate for an LIGA (Lithographie, Galvanoformung and Abformung) technology. According to the method, a wire mesh is used as the substrate; a PMMA (Polymethyl Methacrylate) photoresist sheet is adhered to the wire mesh through a hot pressing method. By using the preparation method, the full wrapping and fusion of the PMMA photoresist and the wire mesh can be effectively realized by using the wire mesh structure, so that a PMMA photoresist pillar structure after synchronous radiation lithography is firmly combined with the wire mesh without collapse or fall, and an extremely large depth-width ratio of the PMMA photoresist pillar structure is guaranteed, so that the research level of the LIGA technology is improved.

Description

technical field [0001] The invention relates to the technical field of micro-nano structure processing, in particular to a method for preparing a composite structure of a PMMA photoresist film with a high degree of combination and a substrate for LIGA technology. Background technique [0002] LIGA technology was invented by the Germans, which includes three main process links: synchrotron radiation X-ray lithography, electroforming and plastic casting. Synchrotron radiation X-ray lithography obtains the plastic structure of the photoresist, and then uses electroforming technology to convert the plastic structure of the photoresist into the required final metal structural element, or electroforms into a metal injection mold, and the plastic casting process utilizes Electroformed metal injection molds are used for the manufacture of plastic structural elements. [0003] LIGA technology uses synchrotron radiation lithography to manufacture micro-metal structures. Because synch...

Claims

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Application Information

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IPC IPC(8): G03F7/16G03F7/20B81C1/00
Inventor 伊福廷
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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