Method for manufacturing semiconductor device

Abstract

The invention provides a method for manufacturing a semiconductor device having epitaxial source-drain areas. Epitaxial layers with the same impurities as traps are grown by an epitaxial way at source-drain grooves and are used as protection layers, so that CMOS device collusion can be prevented and thus the HALO effect can be replaced completely or partially; and then epitaxy of the source-drain areas can be carried out. Therefore, the performance and stability of the semiconductor device can be enhanced.

Description

technical field [0001] The invention relates to the field of manufacturing methods of semiconductor devices, in particular, to a method for manufacturing transistors with epitaxial source and drain regions. Background technique [0002] After semiconductor integrated circuit technology enters the technology node of 90nm feature size, it becomes more and more challenging to maintain or improve transistor performance. In the current mainstream technology, for PMOS, people use the method of epitaxially growing silicon germanium after forming trenches in the source and drain regions to provide compressive stress to squeeze the channel region of the transistor, thereby improving the performance of PMOS. At the same time, for NMOS, in order to achieve the same purpose, the method of epitaxial silicon carbon in the source and drain regions is also gradually adopted. See attached figure 1 , the figure is a schematic diagram of the structure of an existing transistor with epitaxial...

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Problems solved by technology

[0004] The current problem is that if HALO implantation is performed before epitaxy, high dose implantation will cause damage to the crystal structure at the surface of the source and drain grooves, thereby affecting the subsequent source and drain epitaxial growth of silicon germanium; and if HALO implantation is performed after epitaxy HALO implantation, high-dose implantation will lead to stress release of the epitaxial layer, thereby reducing the effect of source-drain stress on suppressing SCE and DIBL effects

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