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Photoelectromotive force device manufacturing method

A technology of photoelectromotive force and manufacturing method, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as different etching rates, misalignment of crystal plane orientation, and limit of reflectivity, etc., to reduce the formation area, The effect of increasing the spacing and suppressing resistance loss

Inactive Publication Date: 2016-01-20
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the case of a polycrystalline silicon substrate, in the method of performing anisotropic etching treatment using an alkaline aqueous solution, the crystal plane orientations of the crystal grains constituting the substrate surface are not aligned, and the anisotropic etching treatment using an alkaline aqueous solution The etch rate varies greatly depending on the crystal plane, so the texture structure can only be partially produced
Due to such a situation, in the case of a polysilicon substrate, there is a problem that there is a limit in the reduction of the reflectance

Method used

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  • Photoelectromotive force device manufacturing method

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Embodiment approach 1

[0049] First, before explaining the structure of the photovoltaic device according to Embodiment 1 of the present invention, an outline of the overall structure of a general photovoltaic device will be described. FIGS. 1-1 to 1-3 are diagrams schematically showing an example of the overall structure of a general photovoltaic device. FIG. 1-1 is a plan view of the photovoltaic device, and FIG. 1-2 is a rear view of the photovoltaic device. , Figure 1-3 is a sectional view of AA of Figure 1-2. The photoelectromotive force device 100 is provided with a photoelectric conversion layer, and the photoelectric conversion layer includes: a P-type silicon substrate 101 as a semiconductor substrate; N-type impurity diffused layer 102 ; and P+ layer 110 containing P-type impurities at a higher concentration than silicon substrate 101 formed on the other main surface (rear surface) side. In addition, the photovoltaic device 100 includes: an anti-reflection film 109 that prevents reflectio...

Embodiment approach 2

[0076] In the description of Embodiment 1, after the high-resistance N-type diffusion layer 102H was formed in the concave portion 106 in FIGS. 5-7 and 6-7, the low-resistance N-type diffusion layer 102L and the high-resistance The phosphorous glass layer on the resistive N-type diffusion layer 102H can also be etched on the extreme surfaces of the low-resistance N-type diffusion layer 102L and the high-resistance N-type diffusion layer 102H with a mixed solution of hydrofluoric acid and nitric acid, for example. In addition, other processing steps are the same as those described in Embodiment 1, and therefore description thereof will be omitted.

[0077] According to Embodiment 2, after etching the phosphorus glass layer on the low-resistance N-type diffusion layer 102L and the high-resistance N-type diffusion layer 102H, these diffusion layers 102L are etched with a mixed acid such as a mixture of hydrofluoric acid and nitric acid. , The outermost surface of 102H is etched, ...

Embodiment approach 3

[0079] In this third embodiment, a case where openings are formed by a method different from that of the first embodiment will be described. Figure 9 It is a figure which shows an example of the structure of the laser processing apparatus used for opening formation in Embodiment 3. This laser processing apparatus 200B includes: a stage 201 on which a processing object such as a silicon substrate 101 is placed; a laser oscillator 203 that outputs a laser beam 204; The first galvano mirror 211 introduced into the optical path is scanned; and the second galvano mirror 213 introduced into the optical path while scanning the laser light 204 reflected by the first galvano mirror 211 in the Y-axis direction 214 .

[0080]In the laser processing apparatus 200B having such a structure, by scanning the first and second galvano mirrors 211 and 213, the laser light 204 converged in a point shape is irradiated to a predetermined position of the etching-resistant film 103 on the silicon su...

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Abstract

The invention provides a manufacturing method for a photoelectromotive force device. Compared with the prior art, the photoelectromotive force device has the advantages that the efficiency of taking of photoelectric current for an external circuit is not lowered, and the photoelectric conversion efficiency is improved. The photoelectromotive force device comprises a P-type silicon substrate (101), a low-resistance N-type diffusion layer (102L) on which N-type impurities are diffused according to a first concentration on the incident surface side of light, a gate electrode (111) formed on the low-resistance N-type diffusion layer (102L), a P+ layer (110) formed on a back surface, and a back surface electrode formed on the P+ layer (110), wherein the back surface electrode is provided with recesses (106) at specified intervals from the upper surface of the low-resistance N-type diffusion layer (102L) to the silicon substrate (101); the upper surface of a region between two adjacent recesses (106) comprises the low-resistance N-type diffusion layer (102L); a high-resistance N-type diffusion layer (102H) on which N-type impurities are diffused according to a second concentration lower than the first concentration is formed in a range of specified depth from the forming surface of the recesses (106).

Description

[0001] This application is a divisional application of the invention patent application with the application number 200880127894.3, the application date is September 7, 2010, and the invention title is "photoelectromotive force device and its manufacturing method". technical field [0002] The present invention relates to a photoelectromotive force device and a manufacturing method thereof. Background technique [0003] In order to improve the performance of photovoltaic devices such as solar cells, how to efficiently take in sunlight into the interior of the photovoltaic device becomes an important element. Therefore, conventionally, a texture structure in which fine concavities and convexities with a size of several tens of nm to several tens of μm are intentionally formed on the surface on the light incident side has been fabricated. In this textured structure, the light once reflected on the surface enters the surface again, and more sunlight is taken into the interior o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 石原隆西村邦彦
Owner MITSUBISHI ELECTRIC CORP
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