Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing graphere layer by laser

A graphene, laser light source technology, applied in graphene, nanotechnology for materials and surface science, semiconductor/solid-state device manufacturing, etc., can solve the problems of time-consuming, difficult to control graphene size, and high process temperature

Inactive Publication Date: 2013-10-30
阙郁伦
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned preparation methods still need breakthroughs. For example, it is difficult to control the size of graphene by mechanical exfoliation, and it is easy to cause graphene to break.
In addition, the process temperature in the general chemical vapor deposition method is too high and time-consuming, and the graphene product needs to go through a complicated transfer procedure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing graphere layer by laser
  • Method for manufacturing graphere layer by laser
  • Method for manufacturing graphere layer by laser

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The method for preparing graphene provided by the present invention includes: providing a substrate; forming a metal layer on one side of the substrate; forming a carbon source substrate layer on the metal layer; providing a laser light source to irradiate the substrate passing through the substrate to the contact surface of the substrate and the metal layer to form a graphene layer; and providing an organic solvent and an acid solution to remove the carbon source substrate layer and the metal layer respectively.

[0036] Wherein, the laser light source is used to pass through the substrate and irradiate on the metal layer. Compared with the substrate and the carbon source substrate layer, the metal layer has a higher absorption rate of the laser light source (such as the wavelength of near-infrared light). Therefore, After the metal layer can effectively absorb the laser light energy, the temperature is raised to absorb the carbon atoms in the carbon source substrate la...

Embodiment 1

[0046] Embodiment 1: the making of unpatterned graphene

[0047] First, if Figure 1A As shown, a substrate 10 is provided. In this embodiment, the substrate 10 is a transparent glass substrate. On the substrate 10, a metal layer 20 is deposited on one side of the substrate 10. In this embodiment, the material of the metal layer 20 It is nickel and its thickness is about 100nm. In addition, the vapor deposition process conditions for forming the metal layer include: the degree of vacuum is 1×10 -5 torr, and the evaporation rate is

[0048] Next, if Figure 1B As shown, a carbon source substrate layer 30 is coated on the metal layer 20 . In this embodiment, the material of the carbon source substrate layer 30 is polymethyl methacrylate (PMMA), and its thickness is about 1000 nm. In addition, the coating process conditions for forming the carbon source substrate layer include: the rotational speed of the spin coater is 3000 rpm. At this time, a test piece of glass substr...

Embodiment 2

[0051] Example 2: Controlling the laser irradiation area to form patterned graphene

[0052] The material and preparation method of each layer in this embodiment 2 are the same as in embodiment 1, the difference lies in controlling the irradiation area of ​​the laser light source 40, please refer to Figure 2A , where the A area is irradiated with laser light, while the B area is not irradiated with laser light. Generally speaking, metals have good thermal conductivity, and the temperature difference between the irradiated area and the non-irradiated area caused by local heating of the laser is not easy to appear, that is, in On a metal layer, in view of the high thermal conductivity of the metal, although the difference between the laser-irradiated and non-irradiated areas can not be clearly seen whether there is graphene or not, it can be obtained with different depths (that is, different thicknesses or layers) and graphite. Graphene with different quality, such as Figure ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a method for manufacturing a graphene layer, comprising the following steps: providing a substrate; forming a metal layer on a first side of the substrate; forming a carbon source layer on the metal layer; providing a laser, which irradiates a second side of the substrate and passes through the substrate to form a graphene layer on an interface between the substrate and the metal layer; and providing an organic solvent and an acid solution to remove the carbon source layer and the metal layer respectively.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing a high-density transparent conductive graphene array induced by laser. Background technique [0002] With the development of optoelectronic display technology, transparent electrodes play a very important role in many fields, such as light-emitting diodes (Light-emitting diodes; LED), flat panel displays (Flat panel displays; FPD), touch screens (Touch screens) and Dye-sensitized solar cells (DSSC) and the like. At present, the material of the transparent electrode is mainly indium tin oxide (ITO or Tin-doped indium oxide). Although the technology of using indium tin oxide as an optoelectronic component has been popularized and mature, there are still inherent disadvantages that limit its future development. For example, indium tin oxide The high cost derived from the insufficient content on the earth, the instability of indium tin oxide materials in acid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/02
CPCC01B31/0446B82Y30/00B82Y40/00C01B32/184
Inventor 阙郁伦丁纪嘉林宏桥
Owner 阙郁伦
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com