Manufacturing method of multi-gate field effect transistor fin structure

Abstract

The invention provides a method for manufacturing fin-shaped structures of a multi-gate field effect transistor. The method comprises the steps: providing a semiconductor substrate, wherein the semiconductor substrate comprises a P-type area and an N-type area; forming a first mask layer on the N-type area, and forming a silicon-germanium layer on the semiconductor substrate; removing the first mask layer; forming second mask layers on the P-type area and the N-type area; etching the second mask layers so as to form a P-type area groove and an N-type area groove; filling the P-type area groove and the N-type area groove with silicon layers; removing the silicon layers outside the P-type area groove and the N-type area groove, and performing an etching-back process; forming third mask layers in the P-type area groove and the N-type area groove; removing the second mask layers so as to form a P-type area fin-shaped structure and an N-type area fin-shaped structure. Due to the fact that the P-type area fin-shaped structure and the N-type area fin-shaped structure are formed on the P-type area and the N-type area respectively, the P-type area fin-shaped structure and the N-type area fin-shaped structure which are different in stress can be formed, the technique is simple, and manufacturing cost is lowered.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing a multi-gate field effect transistor fin structure. Background technique [0002] In recent years, metal-oxide-semiconductor field-effect transistors (MOSFETs) have continued to shrink in size. This is to increase speed, improve component integration and reduce the cost of integrated circuits. The size of transistors continues to decrease, and the reduction of transistors has reached limit of various performances. The thickness of the gate oxide and the depth of the source / drain junction have reached their limits. [0003] Therefore, the industry has developed a multi-gate field effect transistor (Multi-Gate Transistors), and the multi-gate field effect transistor technology is a new circuit structure technology. Traditional transistors have only one gate for each transistor to control the passage or interruption of current between two ...

AI Technical Summary

Problems solved by technology

For example, a fin structure with a higher vertical height provides higher drive current, and a fin structure with a smaller horizontal width can better suppress leakage current. However, due to the continuous shrinking of the size, the vertical height of the fin structure gradually decreases. , the mobility of the channel in the device will be reduced, and the driving current of the device will be affected

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