Heat shield of polysilicon CVD (chemical vapor deposition) reactor

A technology for reactors and heat shields, which is applied in the field of energy-saving devices, can solve the problems of low deposition rate and single furnace output, large heat radiation of quartz bell jars, and difficult to enlarge the size, so as to reduce processing difficulty and maintenance costs, reduce The effect of maintenance frequency and reducing the risk of release

Inactive Publication Date: 2013-10-09
XINTE ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of the one-piece quartz bell jar is that the size is not easy to enlarge, and the pressure resistance is poor. It is only suitable for small CVD reactors to react under normal pressure. The deposition rate and output of a single furnace are low, and it is easy to break. The heat radiation through the quartz bell jar is relatively large

Method used

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  • Heat shield of polysilicon CVD (chemical vapor deposition) reactor
  • Heat shield of polysilicon CVD (chemical vapor deposition) reactor
  • Heat shield of polysilicon CVD (chemical vapor deposition) reactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Such as figure 1 , figure 2 As shown, using the same reduction furnace, a double-layer quartz glass heat shield 1 is placed between the inner wall of a polysilicon CVD reactor 2 and the outermost polysilicon rod 6 in the reactor and fixed on the inner wall 4 of the furnace cylinder. The thickness of layer quartz glass 7a, 7b is 5-15mm, and the spacer between two layers of glass adopts graphite spacer 14, and outer layer quartz glass 7a is coated with silver or gold back reflection layer 7c, and the silver or gold back reflection layer The thickness is about 0.5-3 μm, and the furnace cylinder side wall 4a is covered with quartz glass 1a, and the furnace cylinder dome 4b and the bottom plate 3 are not covered. The CVD reactor is fed with a mixed gas of trichlorosilane and hydrogen, using the same molar ratio, reaction temperature and pressure as the comparative example, and the silicon rod is grown from a diameter of 8mm to about 120mm, repeated 3 times, and the avera...

Embodiment 2

[0028] On the basis of embodiment 1, covered dome 4b with quartz glass 1b, furnace drum dome adopts such as image 3 The splicing shown does not cover chassis 3. The CVD reactor is fed with a mixed gas of trichlorosilane and hydrogen, using the same molar ratio, operating pressure and reaction temperature as the comparative example, the silicon rod is grown from a diameter of 8mm to about 120mm, repeated 3 times, and the average deposition power consumption is 47kWh / kg-Si, the average deposition time is 73h, and the electrical parameters of the product meet the requirements of the national standard GB / T12963-2009 silicon polycrystalline secondary standard.

Embodiment 3

[0030] On the basis of Example 2, the cover chassis 3 is covered with quartz glass 1c. The CVD reactor is fed with a mixed gas of trichlorosilane and hydrogen, using the same molar ratio, operating pressure and reaction temperature as the comparative example, the silicon rod is grown from a diameter of 8mm to about 120mm, repeated twice, and the average deposition power consumption is 42kWh / kg-Si, the average deposition time is 71h, and the electrical parameters of the product meet the requirements of the national standard GB / T12963-2009 silicon polycrystalline secondary standard. Can find out from the comparison of embodiment 1,2,3 and comparative example, adopt heat shield can substantially save electric energy, and shorten deposition time and make the output in unit time be promoted, and product quality does not have obvious change.

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Abstract

The invention relates to the field of an energy-saving device for a polysilicon CVD (chemical vapor deposition) reactor. An integrated quartz heat shield with best performance in the prior art is difficult to enlarge in size, poor in pressure resistance capability and fragile; and the produced heat radiation is high. According to the technical scheme provided by the invention, the heat shield is formed by splicing two or more quartz glass components; the overall heat shield of the reactor is formed by sleeving and superposing one or more layers of the splicing parts, and is fixed on the inner wall of the reactor through a fixing part; and one layer of quartz glass closest to a silicon rod is coated with a back reflection film. The heat shield provided by the invention obviously reduces the heat loss, and has the advantages that the heat stress of the silicon rod is low, the core melting and rod cracking probability of the silicon rod is low, the temperature field is uniform, the large-diameter silicon rod can be beneficially obtained, the yield is high, the equipment is easy to manufacture, convenient to operate and simple to maintain, etc.

Description

technical field [0001] The invention relates to an energy-saving device for a polysilicon chemical vapor deposition (CVD) reactor, in particular to a heat shield for reducing power consumption in a chemical vapor deposition reactor system through mirror reflection and lightening heat convection and heat conduction. [0002] Background technique [0003] In a traditional polysilicon chemical vapor deposition reactor, 75%-95% of the electric energy for heating silicon rods is directly transferred to the reactor wall through thermal radiation and convection, and then taken away by the cooling medium through heat conduction, resulting in a large waste of energy. By reducing the temperature difference, increasing thermal resistance, reflection, secondary radiation, energy cascade utilization or a combination of the above methods are the basic means of energy saving. [0004] At present, the most commonly used method in the industry is to increase the temperature of the reactor w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
Inventor 范协诚黄彬陈喜清潘小龙银波
Owner XINTE ENERGY
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