Static random access memory (SRAM) with redundant structure

Abstract

The invention discloses a static random access memory (SRAM) with a redundant structure. The SRAM comprises first to fourth pull-up tubes, first to fourth pull-down tubes, first to fourth load tubes, and first to fourth gate tubes. On the basis of a conventional SRAM structure, the load tubes are added between drains of the pull-down tubes and the pull-up tubes; the threshold value of each load tube changes within a range of -VDDI / 2-0v, so that under the condition of no soft error, the load tubes are in a turn-on state all the time, and memory information is kept; under the condition of existence of soft errors, through the load tubes and a feedback mechanism of the redundant structure, the memory information can be recovered. The SRAM with the redundant structure has the advantages of high soft error resistance, high stability, low power consumption and compatibility with a commercial logic process.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a redundant structure static random memory unit. Background technique [0002] SRAM (Static Random Access Memory), that is, static random access memory, as the main member of the semiconductor memory family, SRAM is the most widely used memory in the world. It is an indispensable component in digital processing, information processing, and automatic control equipment . [0003] Under the deep sub-micron process conditions, the internal variability of the chip is increasing, and the power supply voltage VDD is gradually decreasing, which affects the stability of the SRAM memory unit to a certain extent. This series of changes will lead to some unexpected problems, making the reliability of semiconductor memory devices worse. The problem of soft errors (Soft Error) caused by high-energy charged particles incident on the sensitive nodes of SRAM cells is attracting more ...

AI Technical Summary

Problems solved by technology

However, in the read mode, the two pairs of nodes inside the DICE unit will be connected through the read-write tube, which will destroy the self-recovery mechanism of the DICE unit, resulting in a permanent flip of the unit, making the hardened SRAM chip based on the DICE unit work in a heavy ion environment. optimism

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