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Cutting technique of oversized-diameter silicon rod

A cutting process and super-large diameter technology, applied in the field of super-large diameter silicon rod cutting process, can solve problems such as difficulty in cutting silicon rods, and achieve the effects of reducing cutting costs, improving wafer yield and reducing costs

Inactive Publication Date: 2013-10-02
阳光硅谷电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the current multi-wire cutting machine, the larger the diameter of the silicon rod, the more difficult it is to cut

Method used

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  • Cutting technique of oversized-diameter silicon rod
  • Cutting technique of oversized-diameter silicon rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The main equipment and raw materials in this embodiment are: multi-wire cutting machine model: MWM650SQ; raw materials: large-diameter silicon rods, with an outer diameter of 385 mm, an inner diameter of 0 mm, a length of 350 mm, and a groove pitch of 5 main rollers of 9240 μm.

[0029] The specifications of the silicon wafers to be cut are 385mm in diameter and 9mm in thickness. The following is the cutting of silicon wafers using a cutting wire with a diameter of 0.14mm.

[0030] The process of cutting ultra-large diameter silicon rods with the above equipment, the specific steps are as follows:

[0031] (1) Mortar configuration: Dry silicon carbide at a temperature of 60-100°C and a drying time of more than 360 minutes. This example uses 400 minutes. Calculate the amount of cutting fluid and silicon carbide according to the ratio. The mass ratio is 1:0.9 for configuration, and the mortar configuration is carried out in the mixing tank, and the mixing time is 6h;

[...

Embodiment 2

[0041] The main equipment and raw materials in this embodiment are: multi-wire cutting machine model: MWM650SQ; raw materials: large-diameter silicon rods, with an outer diameter of 335 mm, an inner diameter of 0 mm, a length of 350 mm, and a groove pitch of 5 main rollers of 4140 μm.

[0042] The specifications of the target cut silicon wafers are 335mm in diameter and 3.9mm in thickness. The following is the cutting of silicon wafers with a cutting wire with a diameter of 0.14mm.

[0043] The process of cutting ultra-large diameter silicon rods with the above equipment, the specific steps are as follows:

[0044] (1) Mortar configuration: Dry silicon carbide at a temperature of 60-100°C and a drying time of more than 360 minutes. This example uses 400 minutes. Calculate the amount of cutting fluid and silicon carbide according to the ratio. The mass ratio is 1:1.0 for configuration, and the mortar configuration is carried out in the mixing tank, and the mixing time is 6h;

...

Embodiment 3

[0054] The main equipment and raw materials in this embodiment are: multi-wire cutting machine model: MWM650SQ; raw materials: large-diameter silicon rods, with an outer diameter of 364 mm, an inner diameter of 280 mm, a length of 350 mm, and a groove pitch of 5 main rollers of 9240 μm.

[0055] The specifications of the silicon wafers to be cut are 364mm in diameter, 280mm in inner diameter, and 9mm in thickness. The following is the cutting of silicon wafers using a cutting wire with a diameter of 0.14mm.

[0056] The process of cutting ultra-large diameter silicon rods with the above equipment, the specific steps are as follows:

[0057] (1) Mortar configuration: Dry silicon carbide at a temperature of 60-100°C and a drying time of more than 360 minutes. This example uses 400 minutes. Calculate the amount of cutting fluid and silicon carbide according to the ratio. The mass ratio is 1:1.2 for configuration, and the mortar configuration is carried out in the mixing tank, and...

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Abstract

The invention discloses a cutting technique of an oversized-diameter silicon rod, which comprises the steps of mortar preparation, rod adhesion, charging, cutting, preheating, cutting and blanking, setting various parameters in a cutting process, and cutting the oversized-diameter silicon rod into silicon wafers in required sizes. The cutting technique can increase a wafer outlet rate of the cutting silicon wafers in a unit kilo effectively, can improve the cutting capacity, can reduce the cutting consumption and wearing capacity, and can lower the cutting cost.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon, and in particular relates to a cutting process of a super-large-diameter silicon rod. Background technique [0002] The basis of modern information technology and modern electronic technology is semiconductor technology, and silicon material is the most important semiconductor material. For the current multi-wire cutting machine, the larger the diameter of the silicon rod, the more difficult it is to cut. Multi-wire cutting is a non-chemical physical processing method that does not affect the characteristics of the workpiece. Through the high-speed reciprocating motion of the cutting wire, the mortar is brought into the workpiece processing area for grinding, and finally the workpiece is cut into thin slices. During the entire cutting process, the main Involving high-speed moving cutting line, mortar and workpiece, the mortar acts as a tool here, thus cutting the silicon rod into pie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
Inventor 王建锁范靖梁宁
Owner 阳光硅谷电子科技有限公司
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